Si9802DY Vishay Siliconix Dual N-Channel Reduced Qg, Fast Switching MOSFET VDS (V) 20 rDS(on) () ID (A) 0.055 @ VGS = 4.5 V 4.5 0.075 @ VGS = 3.0 V 3.8 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150C)a TA = 25C TA = 70C Pulsed Drain Current (10 s Pulse Width) Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range ID Unit V 4.5 3.6 IDM 25 IS 1.7 A 2 PD W 1.3 TJ, Tstg –55 to 150 C Symbol Limit Unit RthJA 62.5 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 70625 S-51303—Rev. A, 19-Dec-96 www.vishay.com FaxBack 408-970-5600 1 Si9802DY Vishay Siliconix Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 A 0.6 Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 IDSS VDS = 20 V, VGS = 0 V 1 Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V, TJ = 70C 5 Unit Static Gate Threshold Voltage On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) Forward Transconductancea Diode Forward Voltagea VDS w 5 V, VGS = 5 V V 25 nA A A VGS = 4.5 V, ID = 4.5 A 0.044 0.055 VGS = 3.0 V, ID = 3.8 A 0.055 0.075 gfs VDS = 10 V, ID = 4.5 A 11.5 VSD IS =1.7 A, VGS = 0 V 0.73 1.2 5.5 10 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) 12 25 tr VDD = 10 V V,, RL = 10 ID ^ 1 A, A VGEN = 4 4.5 5V V, RG = 6 30 60 23 50 9 20 IF = 1.7 A, di/dt = 100 A/s 60 100 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDS = 10 V, V VGS = 4 4.5 5V V, ID = 4.5 45 A nC C 1.2 ns Notes a. Pulse test; pulse width v 300 s, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2 Document Number: 70625 S-51303—Rev. A, 19-Dec-96 Si9802DY Vishay Siliconix Output Characteristics Transfer Characteristics 25 25 VGS = 5 thru 3.5 V TC = –55C 20 3V I D – Drain Current (A) I D – Drain Current (A) 20 15 2.5 V 10 2V 5 25C 15 125C 10 5 1.5 V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS – Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 1200 0.30 900 C – Capacitance (pF) r DS(on) – On-Resistance ( ) 0.25 0.20 0.15 VGS = 3 V 0.10 Ciss 600 Coss 300 Crss 0.05 VGS = 4.5 V 0 0 0 5 10 15 20 25 0 4 8 12 16 20 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 2.0 4.5 VDS = 10 V ID = 4.5 A 3.5 r DS(on) – On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 4.0 3.0 2.5 2.0 1.5 1.0 1.6 VGS = 4.5 V ID = 4.5 A 1.2 0.8 0.4 0.5 0 0 1 2 3 4 Qg – Total Gate Charge (nC) Document Number: 70625 S-51303—Rev. A, 19-Dec-96 5 6 0 –50 0 50 100 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 3 Si9802DY Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.15 r DS(on) – On-Resistance ( ) I S – Source Current (A) 30 10 TJ = 150C TJ = 25C 0.12 ID = 4.5 A 0.09 0.06 0.03 0 1 0 0.2 0.6 0.4 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 2 6 8 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 50 0.2 40 ID = 250 A –0.0 Power (W) V GS(th) Variance (V) 4 –0.2 30 20 –0.4 10 –0.6 –0.8 –50 0 0 50 100 150 0.01 0.1 1 TJ – Temperature (C) 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 4. Surface Mounted 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 4 Document Number: 70625 S-51303—Rev. A, 19-Dec-96