VISHAY SI9422DY

Si9422DY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
VDS (V)
rDS(on) ()
ID (A)
200
0.420 @ VGS = 10 V
1.7
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
N-Channel MOSFET
Symbol
Limit
Drain-Source Voltage
Parameter
VDS
200
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 150C)
150 C)a, b
TA = 25C
Pulsed Drain Current
Avalanche Current
L = 0.1 mH
Single Avalanche Energy
Continuous Source Current (Diode Conduction)a, b
TA = 25C
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
1.3
IDM
12
IAS
12.5
A
EAS
8
mJ
IS
2.1
A
2.5
PD
TA = 70C
V
1.7
ID
TA = 70C
Unit
W
1.6
TJ, Tstg
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 10 sec
Steady State
Typical
Maximum
50
RthJA
80
Unit
C/W
Notes
a. Surface Mounted on FR4 Board.
b. t 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70793
S-59610—Rev. D, 23-Nov-98
www.vishay.com FaxBack 408-970-5600
2-1
Si9422DY
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 mA
2
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
IDSS
VDS = 160 V, VGS = 0 V
1
Zero Gate Voltage Drain Current
VDS = 160 V, VGS = 0 V, TJ = 55C
25
Unit
Static
Gate Threshold Voltage
V
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 1.7 A
gfs
VDS = 10 V, ID = 1.7 A
3.5
VSD
IS = 2.1 A, VGS = 0 V
0.95
1.2
13
25
VDS = 100 V
V, VGS = 10 V
V, ID = 1.7
17A
3.5
Forward Transconductancea
Diode Forward Voltagea
5
nA
mA
A
0.340
0.420
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
nC
C
Gate-Drain Charge
Qgd
4.5
Turn-On Delay Time
td(on)
10
20
tr
10
20
20
40
25
50
115
150
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
VDD = 100 V
V,, RL = 100 W
ID ^ 1 A,
A VGEN = 10 V
V, RG = 6 W
IF = 2.1 A, di/dt = 100 A/ms
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70793
S-59610—Rev. D, 23-Nov-98
Si9422DY
Vishay Siliconix
Output Characteristics
Transfer Characteristics
12
12
VGS = 7 thru 10 V
9
6V
I D – Drain Current (A)
I D – Drain Current (A)
9
5V
6
3
6
TC = 125C
3
25C
–55C
4V
0
0
0
1
2
3
4
5
0
2
VDS – Drain-to-Source Voltage (V)
4
Capacitance
On-Resistance vs. Drain Current
800
Ciss
0.4
VGS = 10 V
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
8
VGS – Gate-to-Source Voltage (V)
0.5
0.3
0.2
600
400
Coss
200
0.1
Crss
0
0
0
3
6
9
12
0
10
ID – Drain Current (A)
2.2
2.0
r DS(on) – On-Resistance ( )
(Normalized)
VDS = 100 V
ID = 1.7 A
8
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Gate Charge
10
V GS – Gate-to-Source Voltage (V)
6
6
4
2
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 1.7 A
1.8
1.6
1.4
1.2
1.0
0.8
0
0
3
6
9
Qg – Total Gate Charge (nC)
Document Number: 70793
S-59610—Rev. D, 23-Nov-98
12
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
www.vishay.com FaxBack 408-970-5600
2-3
Si9422DY
Vishay Siliconix
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.50
r DS(on) – On-Resistance ( W )
20
I S – Source Current (A)
10
TJ = 150C
TJ = 25C
0.45
0.40
0.35
0.30
ID = 1.7 A
0.25
0.2
1
0.00
0.4
0.8
1.2
0
1.6
VSD – Source-to-Drain Voltage (V)
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
50
ID = 250 mA
0.2
40
30
Power (W)
V GS(th) Variance (V)
–0.0
–0.2
–0.4
20
–0.6
10
–0.8
–1.0
–50
0
–25
0
25
50
75
100
125
150
0.01
10
1
0.1
TJ – Temperature (C)
600
100
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
PDM
t1
0.01
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80C/W
Single Pulse
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
0.001
10–4
10–3
10–2
10–1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com FaxBack 408-970-5600
2-4
Document Number: 70793
S-59610—Rev. D, 23-Nov-98