2N1132CSM MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 1.02 ± 0.10 (0.04 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PNP TRANSISTOR. • HIGH SPEED SWITCHING • SCREENING OPTIONS AVAILABLE 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 0.76 ± 0.15 (0.03 ± 0.006) 3 2 0.31 rad. (0.012) FEATURES 1.40 (0.055) max. APPLICATIONS • SMALL SIGNAL GENERAL PURPOSE AND SWITCHING APPLICATIONS LCC1 PACKAGE Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°C unless otherwise stated VCBO VCEO VEBO IC PD Tstg, TJ Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Total Power Dissipation at TAmb = 25°C Derate Above 25°C Operating and Storage Temperature Range 50V 40V 5V 600mA 400mW 2.7mW/°C -55 to +175°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7518, ISSUE 1 2N1132CSM THERMAL CHARACTERISTICS Rth j-Amb Thermal resistance to ambient Max. Unit 375 °C/W ELECTRICAL CHARACTERISTICS (TAmb = 25°C unless otherwise stated) Parameter Test Conditions V(BR)CBO* Collector-Base Breakdown Voltage IC = 10µA IE = 0 50 V(BR)CEO* Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 40 IE = 0 VCB = 50V 10 VCB = 30V 1 ICBO Collector to Base Cut-Off Current IE = 0 Min. Typ. Max. V Tamb =150°C 100 IEBO Emitter to Base Cut-Off Current IC = 0 VEB = 5V 100 ICER Collector to Emitter Cut-Off Current RBE <= 10Ω VCE = 50V 10 hFE* DC Current Gain VCE = 10V VCE(SAT)* Collector To Emitter Saturation Voltage VBE(SAT)* Base To Emitter Saturation Voltage IC = 150mA 30 IC = 5mA 25 IC = 150mA IB = 15mA VCB = 10V IE = 0 Unit µA mA 100 1.3 1.5 V DYNAMIC CHARACTERISTICS COBO Output Capacitance CIBO Input Capacitance | hfe | Small Signal Current Gain td Delay Time tr Rise Time ts Storage Time tf Fall Time 45 f = 1.0MHz VEB = 0.5V pF IC = 0 80 f = 1.0MHz IC = 50mA VCE = 10V f = 20MHz 3.0 20 15 VCC = 30V IC = 150mA IB1 - IB2 = 15mA 25 80 nS 25 * Pulse test tp = 300µs, δ < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk DOC 7518, ISSUE 1