2N3637 MECHANICAL DATA Dimensions in mm (inches) PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035) • Hermetic TO39 Package 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. APPLICATIONS: 2.54 (0.100) 2 1 • General Purpose 3 • High Speed Saturated Switching 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO–39 (TO-205AD) METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC PD PD TJ , TSTG Collector – Emitter Voltage Collector – Base Voltage Emmiter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range -175V -175V -5V -1A 1W 5.71mW/ °C 5W 28.6mW / °C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3068 Issue 2 2N3637 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVCEO Collector–Emitter Breakdown Voltage1 IC = -10mA IB = 0 -175 BVCBO Collector – Base Breakdown Voltage IC = -100μA IE = 0 -175 BVEBO Emitter – Base Breakdown Voltage IC = 0 IE = -10μA -5.0 IEBO Emitter Cut-off Current VBE = -3.0V IC = 0 -50 ICBO Collector Cut-off Current VCB = -100V IE = 0 -100 IC = -0.1mA VCE = -10V 80 IC = -1.0mA VCE = -10V 90 IC = -10mA VCE = -10V 100 IC = -50mA VCE = -10V 100 IC = -150mA VCE = -10V 50 IC = -10mA IB = -1.0mA -0.3 IC = -50mA IB = -5mA -0.5 IC = -10mA IB = -1.0mA -0.8 IC = -50mA IB = -5mA V nA ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector – Emitter Saturation Voltage1 VBE(sat) Base – Emitter Saturation Voltage 300 -0.65 -0.9 − V V SMALL SIGNAL CHARACTERISTICS ft Current Gain Bandwidth Product Cob Output Capacitance Cib Input Capacitance hie Input Impedance hre Voltage Feedback Ratio hfe Small Signal Current Gain hoe Output Admittance NF Noise Figure VCE = -30V IC = -30mA f = 100MHz VCB = -20V MHz 100 IE = 0 f = 100kHz VBE = 1.0V IC = 0 f = 1.0MHz 200 VCE = -10V IC = -10mA f = 1.0kHz 80 10 pF 75 pF 1200 Ω 3.0 x10-4 320 — 200 μmhos 3.0 dB VCE = -10V IC = -0.5mA RS = 1.0KΩ f = 1.0kHz VBE = 4.0V 400 IB1 = IB2 =-5mA 600 SWITCHING CHARACTERISTICS ton Turn–On Time VCC = -100V toff Turn–Off Time IC = -50mA ns 1) Pulse test : Pulse Width < 300μs ,Duty Cycle < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3068 Issue 2