SEME-LAB 2N3904-T18

2N3904-T18
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
GENERAL PURPOSE
HERMETIC NPN SILICON
TRANSISTOR
FEATURES
•
•
•
12.7 (0.500)
min.
5.33 (0.210)
4.32 (0.170)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
•
2.54 (0.100)
Nom.
SILICON NPN EPITAXIAL TRANSISTOR
HERMETIC TO18 PACKAGE
HI-REL SCREENING OPTIONS
AVAILABLE
HIGH SPEED SATURATED SWITCHING
APPLICATIONS
3
1
2
TO-18 (TO-206AA)
Pin 1 – Emitter
Underside View
Pin 2 – Base Pin 3 – Collector
ABSOLUTE MAXIMUM RATINGS T
VCBO
VCEO
VEBO
IC
PD
TJ / Stg
A hermetically sealed TO18 version of the
popular 2N3904 plastic part intended for high
reliability applications.
CASE
= 25° C unless otherwise stated
Collector - Base Voltage
Collector - Emitter Voltage (IB = 0)
Emitter – Base Voltage (IC = 0)
Continuous Collector Current
Total Power Dissipation at
TA = 25°C
Derate Above 25°C
Operating and Storage Temperature Range
60V
40V
6.0V
200mA
0.31W
1.8mW/°C
-65 to +200°C
THERMAL DATA
RθJA
Thermal Resistance Junction - Ambient
Max
565
° C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
DOC 8022, ISSUE 1
2N3904-T18
ELECTRICAL CHARACTERISTICS (T
case
Symbol
=25°C unless otherwise stated)
Parameter
Test Conditions
V(BR)CEO*
Collector Emitter Breakdown
Voltage
IC = 1.0mA
V(BR)CBO
Collector Base Breakdown Voltage
V(BR)EBO
ICEX
hFE*
Min.
Typ.
Max.
IB = 0
40
-
-
IC = 10µA
IE = 0
60
-
-
Emitter Base Breakdown Voltage
IE = 10µA
IC = 0
6
-
-
Collector Emitter Cut-Off Current
VCE = 30V
VEB = 3V
-
-
50
IC = 0.1mA
VCE = 1.0V
40
-
-
IC = 1.0mA
VCE = 1.0V
70
-
-
IC = 10mA
VCE = 1.0V
100
-
300
IC = 50mA
VCE = 1.0V
60
-
-
IC = 100mA
VCE = 1.0V
30
-
-
IC = 1.0mA
VCE = 10V
100
-
400
IC = 10mA
IB = 1.0mA
-
-
0.2
IC = 50mA
IB = 5.0mA
-
-
0.3
IC = 10mA
IB = 1.0mA
0.65
-
0.85
IC = 50mA
IB = 5.0mA
-
-
0.95
300
-
-
-
-
4
DC Current Gain (VCE = 10V)
hfe
Small Signal Current Gain f=1.0KHz
VCE(sat)*
Collector-Emitter Saturation Voltage
VBE(sat)*
Base-Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS (T
fT
Cobo
Current Gain – Bandwidth Product
Output Capacitance
CIBO
Input Capacitance
NF
Noise Figure
td
case
V
nA
V
=25°C unless otherwise stated)
IC = 10mA
VCE = 20V
f = 100MHz
IE = 0
VCB = 5V
f = 1.0MHz
IC = 0
VEB = 0.5V
f = 1.0MHz
MHz
pF
-
-
8
-
-
5
IC = 100µA
VCE = 5V
f = 1.0KHz
RS = 1KΩ
Delay Time
VCC = 3V
VBE = 0.5V
-
-
35
tr
Rise Time
IC = 10mA
IB1 = 1.0mA
-
-
35
ts
Storage Time
VCC = 3V
VBE = 0.5V
-
-
200
tf
Fall Time
IC = 10mA
IB1=IB2= 1.0mA
-
-
50
!
Unit
dB
ns
* Pulse test tp = 300µs, δ < 2%
! Parameter characteristic verified by design only
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be
both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab
encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
DOC 8022, ISSUE 1