(2 k Ω)(1 0 0Ω) E 2SB1351 Silicon PNP Epitaxial Planar Transistor hFE mA –60min V VCE=–4V, IC=–10A 2000min IB –1 A VCE(sat) IC=–10A, IB=–20mA –1.5max PC 30(Tc=25°C) W VBE(sat) IC=–10A, IB=–20mA –2.0max V Tj 150 °C fT VCE=–12V, IE=1A 130typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 170typ pF Tstg 3.9 V 1.35±0.15 1.35±0.15 I B =–1mA –5 0 –1 –2 –3 –4 –5 I C =–10A –5A –1 –5 0 –0.1 –6 –1 –10 h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 20000 10000 DC Cur rent Gain h FE Typ 5000 –10 –20 12 C 25 ˚C –30 ˚C 1000 500 –0.3 –0.5 –1 –5 –10 –20 1 0.3 1 Safe Operating Area (Single Pulse) 10 s he 100x100x2 at si 10 nk –0.1 150x150x2 ite 40 fin Without Heatsink Natural Cooling In –0.5 20 ith –1 Natural Cooling Silicone Grease Heatsink: Aluminum in mm W Collecto r Cur ren t I C (A) 1m DC –5 s 80 1000 P c – T a Derating m 120 10 –10 Typ 100 30 –30 160 –2.4 Time t(ms) (V C E =–12V) 200 –2 0.5 Collector Current I C (A) f T – I E Characteristics (Typical) Cut-o ff F requ ency f T (MH Z ) 5˚ 5000 Collector Current I C (A) 240 –1 θ j-a – t Characteristics 5 Ma ximum Po we r Dissipatio n P C (W) DC Cur rent Gain h FE 20000 –5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –1 0 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) 1000 800 –0.3 –10 –1A Collector-Emitter Voltage V C E (V) 10000 –15 ) –10 –2 emp –2m A (V C E =–4V) –20 –3 eT Collector Current I C (A) –3 mA I C – V BE Temperature Characteristics (Typical) ˚C ( –4 m A –15 0 0.6typ 125 A –1 0m A –6m 1.5typ B C E Collector Current I C (A) –20 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) I C – V CE Characteristics (Typical) 0.7typ 20 –20 tstg (µs) Cas 5 –10 –10 ton (µs) IB2 (mA) IB1 (mA) θ j- a ( ˚C/W) 4 –40 VBB2 (V) VBB1 (V) IC (A) 2.4±0.2 2.2±0.2 Transient Thermal Resistance RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b mp) A –10max e Te –12(Pulse–20) VEB=–6V IC=–10mA (Cas V(BR)CEO 4.2±0.2 2.8 c0.5 –30˚C IEBO V 10.1±0.2 4.0±0.2 V –6 µA 0.8±0.2 –60 VEBO –10max ) VCEO VCB=–60V emp ICBO se T V Unit (Ca –60 Ratings 25˚C VCBO External Dimensions FM20(TO220F) (Ta=25°C) Condition ±0.2 Symbol Unit IC C 8.4±0.2 ■Electrical Characteristics Ratings Symbol Equivalent circuit Application : Driver for Printer Head, Solenoid, Relay, Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) B 13.0min Darlington 50x50x2 Without Heatsink 2 0 0.05 0.1 0.5 1 Emitter Current I E (A) 42 5 10 20 –0.05 –2 –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150