JMNIC 2SB1023

JMnic
Product Specification
2SB1023
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220Fa package
・High DC current gain
・Low saturation voltage
・Complement to type 2SD1413
APPLICATIONS
・Power amplifier and switching applications
・Hammer drive,pulse motor drive applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector -emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
-3
A
-0.5
A
20
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SB1023
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-4mA
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-4mA
-2.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-20
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.5
mA
hFE-1
DC current gain
IC=-1A ; VCE=-2V
2000
hFE-2
DC current gain
IC=-3A ; VCE=-2V
1000
-40
UNIT
V
Switching times
ton
Turn-on time
tstg
Storage time
tf
IB1=-IB2=-6mA
VCC=-30V ,RL=10Ω
Fall time
2
0.30
μs
0.60
μs
0.25
μs
JMnic
Product Specification
2SB1023
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3