Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC(DC)=500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -25 V Collector to emitter voltage VCEO -16 V Emitter to base voltage VEBO -6 V Collector current IC -500 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -16 V, IE = 0 Testconditons Min -100 nA Emitter cutoff current IEBO VEB = -6.0 V, IC = 0 -100 nA DC current gain * hFE VCE = -1.0 V, IC = -100 mA 110 IC = -100 mA, IB = -10 mA Collector saturation voltage * VCE(sat) Base saturation voltage * VBE(sat) IC = -2A, IB = -0.1A IC = -500 mA, IB = -20 mA Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW VBE VCE = -1.0 V, IC = -10 mA fT VCE = -3.0 V, IE = 100 mA Cob 350 µs, duty cycle VCB = -10 V, IE = 0 , f = 1.0 MHz Typ 200 400 -60 -120 mV -250 -400 mV -0.95 -1.2 V -0.66 -0.7 V 50 MHz 15 pF 2% hFE Classification Marking B42 B43 B44 hFE 110 240 190 320 270 400 www.kexin.com.cn 1