Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High dc current gain. hFE:200TYP. (VCE=-1V, IC=-100mA) +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -30 V Collector to emitter voltage VCEO -25 V Emitter to base voltage VEBO -5 V Collector current (DC) IC -700 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Tstg -55 to +150 Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -30 V, IE = 0 -100 nA Emitter cutoff current IEBO VEB = -5.0 V, IC = 0 -100 nA DC current gain * hFE VCE = -1.0 V, IC = -100 mA 110 VBE VCE = -6.0 V, IC = -10 mA -600 Base to emitter voltage * Collector saturation voltage * VCE(sat) IC = -700 mA, IB = -70 mA Output capacitance Cob Gain bandwidth product * Pulsed: PW 350 µs, duty cycle fT 200 400 -640 -700 mV -0.25 -0.6 V VCB = -6.0 V, IE = 0, f = 1.0 MHz 17 pF VCE = -6.0 V, IE = 10 mA 160 MHz 2% hFE Classification BV Marking Rank 1 2 3 4 5 hFE 110 180 135 220 170 270 200 320 250 400 www.kexin.com.cn 1