Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB736 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Complementary to 2SD780. 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High DC Current Gain: hFE = 200 TYP. (VCE = -1.0 V, IC = -50 mA) 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -60 V Emitter to base voltage VEBO -5.0 V Collector current (DC) IC -300 mA Total power dissipation PT 200 mW Tj 150 Tstg -55 to +150 Junction temperature Storage temperature range Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = -50 V, IE = 0 -100 nA Emitter cutoff current IEBO VEB = -5.0 V, IC = 0 -100 nA DC current gain * hFE VCE = -1.0 V, IC = -50 mA 110 Base to emitter voltage * VBE VCE = 6.0 V, IC = -10 mA -600 Collector saturation voltage * Cob Gain bandwidth product 350 µs, duty cycle Min VCE(sat) IC = -300 mA, IB = -30 mA Output capacitance * Pulsed: PW Testconditons fT Typ 400 -660 -700 mV -0.35 -0.6 V VCB = -6.0 V, IE = 0 , f = 1.0 MHz 13 pF VCE = -6.0 V, IE = 10 mA 100 MHz 2% hFE Classification Marking BW1 BW2 BW3 BW4 BW5 hFE 110 180 135 220 170 270 200 320 250 400 www.kexin.com.cn 1