HTSEMI 2SA1662

2SA1662
TRANSISTOR (PNP)
FEATURES
Complementary to KTC4374
SOT-89
1. BASE
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
Units
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.4
A
PC
Collector Power Dissipation
0.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
2. COLLECTOR
1
2
3. EMITTER
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
IC=-1mA,IE=0
-80
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
-80
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-80V,IE=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
hFE(1)
VCE=-2V,IC=-50mA
70
hFE(2)
VCE=-2V,IC=-200mA
40
DC current gain
Collector-emitter saturation voltage
VCE(sat)
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
CLASSIFICATION OF
Rank
Range
Marking
Cob
conditions
MIN
TYP
-0.55
-0.4
V
-0.8
V
VCE=-10V,IC=-10mA
120
MHz
VCB=-10V,IE=0,f=1MHz
14
pF
hFE(1)
O
Y
70-140
120-240
FO
FY
1 JinYu
semiconductor
UNIT
240
IC=-200mA,IB=-20mA
VCE=-2V,IC=-5mA
MAX
www.htsemi.com
Date:2011/05
2SA1662
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05