2SD2114 TRANSISTOR (NPN) FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). SOT-23 MARKING: BBV,BBW 1. BASE 2.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter 3.COLLECTOR Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 0.25 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=10μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN TYP MAX UNIT 25 V IC =1mA, IB=0 20 V V(BR)EBO IE=10μA, IC=0 12 V Collector cut-off current ICBO VCB=20 V, IE=0 0.5 μA Emitter cut-off current IEBO VEB=10V,IC=0 0.5 μA DC current gain hFE VCE=3V, IC=10mA Collector-emitter saturation voltage Range VCB=10V,IE=0,f=1MHz Vin=0.1V(rms),IB=1mA, R(on) On resistance Rank f=100MHz Cob output capacitance f=1KHZ JinYu 2700 0.4 MHz 8 pF 0.8 Ω V W 820-1800 1200-2700 www.htsemi.com V 350 hFE １ semiconductor 820 IC= 500mA, IB=20 mA VCE=10V, IC=50mA fT Transition frequency CLASSIFICATION OF VCE(sat) IE=0 2SD2114 ２ JinYu semiconductor www.htsemi.com 2SD2114 ３ JinYu semiconductor www.htsemi.com