Inchange Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-Peak 6 A IB Base current 0.5 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ B TC=25℃ THERMAL CHARACTERISTICS SYMBOL CHARACTERISTICS MAX UNIT Rθjc Thermal resistance junction to case 4.16 ℃/W Inchange Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBE Base-emitter on voltage IC=0.5A ; VCE=5V 1.0 V ICBO Collector cut-off current VCB=60V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=0.5A ; VCE=5V Transition frequency IC=0.5A ; VCE=5V;f=1MHz VCEsat fT CONDITIONS MIN TYP. 60 MAX UNIT 300 3 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=10IB1=-10IB2=2A VCC=30V PW=30μs hFE Classifications O Y GR 60-120 100-200 150-300 2 1.2 μs 2.0 μs 1.1 μs Inchange Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3