Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1173 ·Collector current :IC=-3A ·Collector dissipation:PC=10W@TC=25℃ APPLICATIONS ·Low frequency power amplifier ·Power regulator PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -3 A PC Collector power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -30 V V(BR)CBO Collector-base breakdown voltage IC=-0.5mA ;IE=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.8 V VBE Base-emitter voltage IC=-0.5A ; VCE=-2V -1.0 V ICBO Collector cut-off current VCB=-20V;IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE-1 DC current gain IC=-0.5A ; VCE=-2V 70 hFE-2 DC current gain IC=-2.5A ; VCE=-2V 25 COB Output capacitance IE=0; VCB=-10V;f=1MHz 40 pF fT Transition frequency IC=-0.5A ; VCE=-2V 100 MHz VCEsat CONDITIONS hFE-1 classifications O Y 70-140 120-240 2 MIN TYP. MAX UNIT 240 Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SA473 Silicon PNP Power Transistors 4