Inchange Semiconductor Product Specification 2SA755 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SC1419 ·Note:Type 2SA754 with short pin APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -4 V -2 A 20 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA755 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,RBE=∞ -50 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0 -50 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ,IC=0 -4 V Collector-emitter saturation voltage IC=-1.5A; IB=-0.15A -1.3 V VBE Base-emitter on voltage IC=-1A ; VCE=-4V -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -100 μA hFE-1 DC current gain IC=-1A ; VCE=-4V 35 hFE-2 DC current gain IC=-0.1A ; VCE=-4V 35 Transition frequency IC=-0.5A ; VCE=-4V VCEsat fT CONDITIONS hFE-1 Classifications A B C 35-70 60-120 100-200 2 MIN TYP. MAX UNIT 200 50 MHz Inchange Semiconductor Product Specification 2SA755 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3