ISC 2SA755

Inchange Semiconductor
Product Specification
2SA755
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1419
·Note:Type 2SA754 with short pin
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-4
V
-2
A
20
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA755
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ,RBE=∞
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-5mA ,IE=0
-50
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-5mA ,IC=0
-4
V
Collector-emitter saturation voltage
IC=-1.5A; IB=-0.15A
-1.3
V
VBE
Base-emitter on voltage
IC=-1A ; VCE=-4V
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-100
μA
hFE-1
DC current gain
IC=-1A ; VCE=-4V
35
hFE-2
DC current gain
IC=-0.1A ; VCE=-4V
35
Transition frequency
IC=-0.5A ; VCE=-4V
VCEsat
fT
CONDITIONS
‹ hFE-1 Classifications
A
B
C
35-70
60-120
100-200
2
MIN
TYP.
MAX
UNIT
200
50
MHz
Inchange Semiconductor
Product Specification
2SA755
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3