2SD1119 TRANSISTOR (NPN) SOT-89 FEATURES 1. BASE z Low collector-emitter saturation voltage VCE(sat) z Satisfactory operation performances at high efficiency with the low 2. COLLECTOR 1 2 voltage power supply. 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 3 A PC Collector Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 7 V Collector cut-off current ICBO VCB=10V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=6V, IC=0 0.1 μA hFE(1) VCE=2V, IC=500mA 230 hFE(2) VCE=2V, IC=2A 150 VCE(sat) IC=3A, IB=0.1A 600 DC current gain Collector-emitter saturation voltage Collector output capacitance CLASSIFICATION OF Rank Range Marking VCE=6V, IC=50mA, f=200MHz fT Transition frequency Cob JinYu 150 VCB=20V, f=1MHz Q R 230-380 340-600 TQ TR www.htsemi.com V MHz 50 hFE(1) １ semiconductor 1 pF 2SD1119 ２ JinYu semiconductor www.htsemi.com