2SC4097 TRANSISTOR (NPN) SOT-323 3 FEATURES z High ICMax. ICMax=0.5A z Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577 z 1 2 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25℃unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 1 μA Emitter cut-off current IEBO VEB=4V,IC=0 1 μA DC current gain hFE VCE=3V,IC=10mA Collector-emitter saturation voltage VCE(sat) fT Transition frequency Cob Collector Output Capacitance CLASSIFICATION OF Rank Range MARKING JinYu 390 IC=500mA, IB=50mA 0.4 VCE=5V, IC=20mA,f =100MHz VCB=10V,IE=0,f=1MHZ MHz 6 pF P Q R 82-180 120-270 180-390 CP CQ CR www.htsemi.com V 250 hFE １ semiconductor 82