2SC4375 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES z Small Flat Package z Low Collector- Emitter Saturation Voltage 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=1mA,IC=0 5 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA DC current gain hFE VCE=2V, IC=500mA Collector-emitter saturation voltage VCE(sat) 2 V 1 V VBE VCE=2V, IC=500mA Transition frequency fT VCE=2V,IC=500mA Cob 120 VCB=10V, IE=0, f=1MHz RANK O Y RANGE 100–200 160–320 MARKING GO GY １ JinYu www.htsemi.com MHz 40 CLASSIFICATION OF hFE semiconductor 320 IC=1.5A,IB=30mA Base-emitter voltage Collector output capacitance 100 pF