HTSEMI 2SC4375

2SC4375
SOT-89-3L
TRANSISTOR (NPN)
1. BASE
FEATURES
z Small Flat Package
z Low Collector- Emitter Saturation Voltage
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
1.5
A
PC
Collector Power Dissipation
500
mW
Thermal Resistance From Junction To Ambient
250
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
RθJA
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=1mA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
µA
DC current gain
hFE
VCE=2V, IC=500mA
Collector-emitter saturation voltage
VCE(sat)
2
V
1
V
VBE
VCE=2V, IC=500mA
Transition frequency
fT
VCE=2V,IC=500mA
Cob
120
VCB=10V, IE=0, f=1MHz
RANK
O
Y
RANGE
100–200
160–320
MARKING
GO
GY
1 JinYu
www.htsemi.com
MHz
40
CLASSIFICATION OF hFE
semiconductor
320
IC=1.5A,IB=30mA
Base-emitter voltage
Collector output capacitance
100
pF