2 SC2859 TRANSISTOR (NPN) SOT–23 FEATURES Excellent hFE Linearity Switching Applications 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=1V, IC=100mA 70 400 hFE(2) VCE=6V, IC=400mA 25 70 DC current gain Collector-emitter saturation voltage VCE(sat) Base-emitter voltage VBE Transition frequency fT Cob Collector output capacitance conditions Min Typ IC=100mA, IB=10mA VCE=1V,IC=100mA, VCE=6V,IC=20mA VCB=6V, IE=0, f=1MHz Max 0.25 V 1 V 300 MHz 7 pF CLASSIFICATION OF hFE(1), hFE(2) RANK O Y GR(G) RANGE hFE(1) 70–140 120–240 200–400 RANGE hFE(2) 25Min 40Min 70Min MARKING WO WY WG １ JinYu semiconductor www.htsemi.com Unit