isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3376 · DESCRIPTION ·Collector-Emiiter Breakdown Voltage: V(BR)CEO= 800V(Min.) ·High Speed Switching APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. n c . i m e ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 900 V 800 V 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 60 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3376 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.2 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain 1.0 μs 4.0 μs 1.0 μs w w tr Rise Time ts Storage Time tf Fall Time n c . i m e s c s i . w Switching Times; Resistive Load isc Website：www.iscsemi.cn MIN IC= 0.8A; VCE= 5V IB1= 0.08A; IB2= -0.2A; VCC≈ 400V; RL= 500Ω TYP. MAX UNIT 10