isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5352 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5352 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.5A 1.3 V ICBO Collector Cutoff Current VCB= 480V ; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA hFE DC Current Gain IC= 1A ; VCE= 5V 0.5 μs 2.0 μs 0.3 μs B B TYP. MAX UNIT 20 Switching times tr tstg tf Rise Time Storage Time IB1= 0.5A; IB2= -1A; RL= 50Ω PW=20μs; Duty Cycle≤1%; VCC≈200V Fall Time isc Website：www.iscsemi.cn 2