isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2552 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2 A IB Base Current-Continuous 0.5 A Total Power Dissipation @ Ta=25℃ 1.5 B PC TJ Tstg W Total Power Dissipation @ TC=25℃ 20 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2552 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 500 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V ICBO Collector Cutoff Current VCB= 400V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.1A ; VCE= 5V 20 hFE-2 DC Current Gain IC= 1A ; VCE= 5V 8 1.0 μs 2.5 μs 1.0 μs B B MAX UNIT Switching times tr tstg tf Rise Time Storage Time VCC≈ 200V, RL= 250Ω, IB1= -IB2= 0.08A, Fall Time isc Website：www.iscsemi.cn 2