isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3657 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous 2 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3657 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1 mA hFE DC Current Gain IC= 1A; VCE= 5V 1.0 μs 2.5 μs 1.0 μs B B TYP. MAX UNIT 10 Switching times tr tstg tf Rise Time IC= 1A; IB1= -IB2= -0.4A; RL= 400Ω; VCC≈ 400V Storage Time Fall Time hFE-1 Classifications K L M 10-20 15-30 20-40 isc Website：www.iscsemi.cn 2