Inchange Semiconductor Product Specification 2SB965 Silicon PNP Power Transistors · DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1288 APPLICATIONS ·For use in low frequency and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V -7 A 70 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB965 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -1.5 V VBEsat Base-emitter saturation voltage IC=-4A ;IB=-0.4A -2.0 V ICBO Collector cut-off current VCB=-120V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE -1 DC current gain IC=-1A ; VCE=-5V 60 hFE -2 DC current gain IC=-4A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 150 pF fT Transition frequency IC=-1A ; VCE=-5V 75 MHz CONDITIONS Q P 60-120 100-200 160-320 TYP. UNIT V B 2 MAX -120 B hFE-1 classifications R MIN 320 Inchange Semiconductor Product Specification 2SB965 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3