isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB689 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -5 A Total Power Dissipation @ Ta=25℃ 1.8 PC TJ Tstg W Total Power Dissipation @ TC=25℃ 40 Junction Temperature 150 ℃ -45~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB689 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -1.0 V ICEO Collector Cutoff Current VCE= -80V; RBE= ∞ -100 μA IEBO Emitter Cutoff Current VEB= -3.5V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.5A; VCE= -4V 50 250 hFE-2 DC Current Gain IC= -50mA; VCE= -4V 25 350 isc Website：www.iscsemi.cn CONDITIONS MIN MAX UNIT -100 V -4 V B 2 TYP.