2SD2413 TRANSISOR (NPN) FEATURES z High collector to base voltage VCBO z High collector to emitter voltage VCEO z Large collector power dissipation PC z Low collector to emitter saturation voltage VCE(sat) SOT-89 1. BASE 2. COLLECTOR Marking:1S 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1 3. EMITTER 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 400 V Collector-emitter breakdown voltage V(BR)CEO IC=0.5mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=400V, IE=0 50 μA Emitter cut-off current IEBO VEB=5V, IC=0 50 μA DC current gain hFE VCE=5V, IC=30mA Collector-emitter saturation voltage VCE(sat) IC=50mA, IB=5mA 1.5 V Base-emitter saturation voltage VBE(sat) IC=50mA, IB=5mA 1.5 V Transition frequency Collector output capacitance fT Cob VCE=30V, IC=20mA, f=200MHz VCB = 30V, IE=0, f=1MHz １ JinYu semiconductor www.htsemi.com 30 40 MHz 7 pF 2SD2413 １ JinYu semiconductor www.htsemi.com