BF620 TRANSISTOR (NPN) SOT-89 FEATURES Low current (max. 50mA) z z High voltage (max. 300V). z Video output stages. 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 Marking：DC MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA, IE=0 300 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 300 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=200V, IE=0 10 nA Emitter cut-off current IEBO VEB=5V, IC=0 50 nA DC current gain hFE VCE=20V, IC=25mA VCE(sat) IC=30mA, IB=5mA 0.6 V Collector-emitter saturation voltage Transition frequency fT VCE=10V, IC=10mA, f=100MHz 50 60 MHz １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BF620 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５