Transistors IC SMD Type NPN Silicon Epitaxia 2SC3739 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 High gain bandwidth product: fT=200MHz. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Total power dissipation PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 at 25 ambient temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 40V, IE=0 Emitter cutoff current IEBO VEB = 4V, IC=0 DC current gain * hFE VCE = 1V , IC = 150mA Collector-emitter saturation voltage * VCE(sat) IC = 500mA , IB = 50mA Base-emitter saturation voltage * VBE(sat) IC = 500mA , IB = 50mA Gain bandwidth product fT Output capacitance VCE = 10V , IE = -20mA Cob VCB = 10V , IE = 0 , f = 1.0MHz Min 75 200 Typ Max Unit 100 nA 100 nA 150 300 0.25 0.75 1.0 1.2 400 3.5 V V MHz 8.0 pF Turn-on time ton VCC = 30V , 35 ns Storage time tstg IC = 150mA , 225 ns Turn-off time toff IB1 = -IB2 = 15mA 275 ns *. PW 350ìs,duty cycle 2% hFE Classification Marking hFE B12 75 150 B13 100 200 B14 150 300 www.kexin.com.cn 1