KEXIN 2SC3739

Transistors
IC
SMD Type
NPN Silicon Epitaxia
2SC3739
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
1
0.55
High gain bandwidth product: fT=200MHz.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
at 25
ambient temperature
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = 40V, IE=0
Emitter cutoff current
IEBO
VEB = 4V, IC=0
DC current gain *
hFE
VCE = 1V , IC = 150mA
Collector-emitter saturation voltage *
VCE(sat) IC = 500mA , IB = 50mA
Base-emitter saturation voltage *
VBE(sat) IC = 500mA , IB = 50mA
Gain bandwidth product
fT
Output capacitance
VCE = 10V , IE = -20mA
Cob
VCB = 10V , IE = 0 , f = 1.0MHz
Min
75
200
Typ
Max
Unit
100
nA
100
nA
150
300
0.25
0.75
1.0
1.2
400
3.5
V
V
MHz
8.0
pF
Turn-on time
ton
VCC = 30V ,
35
ns
Storage time
tstg
IC = 150mA ,
225
ns
Turn-off time
toff
IB1 = -IB2 = 15mA
275
ns
*. PW
350ìs,duty cycle 2%
hFE Classification
Marking
hFE
B12
75 150
B13
100
200
B14
150
300
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