Transistors IC SMD Type Silicon PNP Epitaxia 2SA1411 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Very high DC current gain:hFE=500 to 1600. 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High VEBO Voltage:VEBO=-10V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -10 V IC -150 mA PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector current Total power dissipation at 25 ambient temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = -25 V, IE = 0 -100 nA Emitter cutoff current IEBO VEB = -7 V, IC = 0 -100 nA DC current gain * hFE VCE = -5 V, IC = -1 mA VBE Base-emitter voltage * 500 1000 1600 VCE = -5 V, IC = -1 mA -580 Collector-emitter saturation voltage * VCE(sat) IC = -50mA , IB = -5mA -0.15 -0.3 V Base-emitter saturation voltage * VBE(sat) IC = -50mA , IB = -5mA -0.8 -1.2 V Gain bandwidth product fT mV VCE = -5V , IE = 10mA 200 MHz Output capacitance Cob VCB = -5V , IE = 0 , f = 1.0MHz 4.6 pF Turn-on time ton VCC = -10V , VBE(off) = 2.7V , 0.12 ns Storage time tstg IC = -50mA , 0.58 ns Turn-off time toff IB1 = -IB2 = -1mA 0.75 ns * PW 350ìs,duty cycle 2% hFE Classification Marking hFE M15 500 1000 M16 800 1600 www.kexin.com.cn 1