KEXIN 2SC3617

Transistors
SMD Type
NPN Silicon Epitaxia
2SC3617
Features
World standard miniature package.
High hFE hFE=800 to 1600.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
300
mA
Collector current (Pulse)*
ICP
500
mA
Total power dissipation
PT
2.0
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* PW
10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
hFE
DC current gain *
Testconditons
Min
Typ
VCB = 50V, IE=0
VEB = 10V, IC=0
VCE = 5.0V , IC = 100mA
800
VCE = 5.0V , IC = 300mA
640
Max
Unit
100
nA
100
nA
3200
Collector-emitter saturation voltage *
VCE(sat) IC = 100mA , IB = 1.0mA
0.12
0.13
V
Base-emitter saturation voltage *
VBE(sat) IC = 100mA , IB = 1.0mA
0.7
1.2
V
Gain bandwidth product
fT
Output capacitance
*. PW
Cob
VCE = 5.0V , IE = -50mA
VCB = 10V , IE = 0, f = 1.0MHz
150
220
MHz
8.0
pF
350ìs,duty cycle 2%
hFE Classification
Marking
TM
TL
hFE
800 1600
1200 2400
TK
2000
3200
www.kexin.com.cn
1