Transistors SMD Type NPN Silicon Epitaxia 2SC3617 Features World standard miniature package. High hFE hFE=800 to 1600. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 15 V Collector current IC 300 mA Collector current (Pulse)* ICP 500 mA Total power dissipation PT 2.0 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * PW 10ms,duty cycle 50%. Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO hFE DC current gain * Testconditons Min Typ VCB = 50V, IE=0 VEB = 10V, IC=0 VCE = 5.0V , IC = 100mA 800 VCE = 5.0V , IC = 300mA 640 Max Unit 100 nA 100 nA 3200 Collector-emitter saturation voltage * VCE(sat) IC = 100mA , IB = 1.0mA 0.12 0.13 V Base-emitter saturation voltage * VBE(sat) IC = 100mA , IB = 1.0mA 0.7 1.2 V Gain bandwidth product fT Output capacitance *. PW Cob VCE = 5.0V , IE = -50mA VCB = 10V , IE = 0, f = 1.0MHz 150 220 MHz 8.0 pF 350ìs,duty cycle 2% hFE Classification Marking TM TL hFE 800 1600 1200 2400 TK 2000 3200 www.kexin.com.cn 1