Transistors IC SMD Type NPN Silicon Epitaxia 2SC4173 Features High gain bandwidth product: fT=200MHz min. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Total power dissipation PT 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 40V, IE=0 Testconditons Min 100 nA Emitter cutoff current IEBO VEB = 4V, IC=0 100 nA hFE VCE = 1V , IC = 150mA 150 300 Collector-emitter saturation voltage * VCE(sat) IC = 500mA , IB = 50mA 0.25 0.75 V Base-emitter saturation voltage * VBE(sat) IC = 500mA , IB = 50mA 1.0 1.2 V DC current gain * Gain bandwidth product fT VCE = 10V , IE = -20mA 75 Typ 200 400 MHz Output capacitance Cob VCB = 10V , IE = 0 , f = 1.0MHz 3.5 Turn-on time ton VCC = 30V , 30 ns Storage time tstg IC = 150mA , 150 ns Turn-off time toff IB1 = -IB2 = 15mA 180 ns *. PW 8.0 pF 350ìs,duty cycle 2% hFE Classification Marking B12 hFE 75 150 B13 100 200 B14 150 300 www.kexin.com.cn 1