ISC 2SB1096

Inchange Semiconductor
Product Specification
2SB1096
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-220Fa package
・High breakdown voltage
・Complement to type 2SD1587
APPLICATIONS
・For TV vertical output applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector -emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
-2
A
IC
PC
Collector current
Ta=25℃
2.0
TC=25℃
25
Collector power dissipation
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1096
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA; IB=0
-150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-500mA ;IB=-50mA
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-500mA ;IB=-50mA
-1.5
V
ICBO
Collector cut-off current
VCB=-150V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-50
μA
hFE
DC current gain
IC=-0.4A ; VCE=-10V
Transition frequency
IC=-0.4A; VCE=-10V
fT
‹
CONDITIONS
hFE Classifications
M
L
K
40-80
60-120
100-200
2
MIN
TYP.
40
MAX
UNIT
200
5
MHz
Inchange Semiconductor
Product Specification
2SB1096
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3