ISC 2SB1016

Inchange Semiconductor
Product Specification
2SB1016
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220Fa package
・High breakdown voltage
・Low collector saturation voltage
・Complement to type 2SD1407
APPLICATIONS
・Power amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector -emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
-5
A
-0.5
A
30
W
IC
Collector current
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1016
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=-4A ;IB=-0.4A
-2.0
V
VBE
Base-emitter voltage
IC=-4A; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-1
mA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
40
hFE-2
DC current gain
IC=-4A ; VCE=-5V
20
Transition frequency
IC=-1A; VCE=-5V
Collector output capacitance
f=1MHz ; VCB=-10V;IE=0
fT
COB
‹
CONDITIONS
hFE-1 Classifications
R
O
Y
40-80
70-140
120-240
2
MIN
TYP.
MAX
-100
UNIT
V
240
5
MHz
270
pF
Inchange Semiconductor
Product Specification
2SB1016
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
2SB1016
Silicon PNP Power Transistors
4