ISC 2SB1192

Inchange Semiconductor
Product Specification
2SB1192
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220Fa package
・High VCEO
・Large PC
・Complement to type 2SD1770
APPLICATIONS
・Power amplifier
・TV vertical deflection output
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-1
A
ICM
Collector current-peak
-2
A
PC
Collector power dissipation
Ta=25℃
2
W
TC=25℃
25
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SB1192
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA , B=0
V(BR)EBO
Emitter-base breakdown voltage
IE=-0.5mA ,IC=0
Collector-emitter saturation voltage
IC=-500mA; IB=-50mA
-1.0
V
VBE
Base-emitter on voltage
IC=-300mA ; VCE=-10V
-1.0
V
ICBO
Collector cut-off current
VCB=-200V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-50
μA
hFE-1
DC current gain
IC=-100mA ; VCE=-10V
60
hFE-2
DC current gain
IC=-300mA ; VCE=-10V
50
COB
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
35
pF
fT
Transition frequency
IC=-100mA ; VCE=-10V
20
MHz
VCEsat
‹
CONDITIONS
hFE-1 Classifications
Q
P
60-140
100-240
2
MIN
TYP.
MAX
UNIT
-150
V
-6
V
240
Inchange Semiconductor
Product Specification
2SB1192
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.15 mm)
3