ZUMT491 SOT323 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 2 – MARCH 2007 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (IC) APPLICATIONS * Ideally suited for space / weight critical applications E C B SOT323 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector Base Voltage V CBO 80 V Collector Emitter Voltage V CEO 60 V Emitter Base Voltage V EBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Base Current IB 200 mA Power Dissipation at T amb =25°C P tot 500 mW Operating and Storage Temperature Range T j :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector Base Breakdown Voltage V (BR)CBO Collector Emitter Breakdown Voltage TYP. MAX. UNIT CONDITIONS. 80 V I C =100µA, I E =0 V CEO(sus) 60 V I C =10mA*, I B =0 Emitter Base Breakdown Voltage V (BR)EBO 5 V I E =100µA, I C =0 Collector Cut Off Current I CBO 100 nA V CB =60V Collector Cut Off Current I CES 100 nA VCE=60V Emitter Cut Off Current I EBO 100 nA V EB =4V, I C =0 Collector Emitter Saturation Voltage V CE(sat) 0.25 0.50 V V I C =500mA, I B =50mA* I C =1A, I B =100mA* Base Emitter Saturation Voltage V BE(sat) 1.1 V I C =1A, I B =100mA* Base Emitter Turn On Voltage V BE(on) 1.0 V IC=1A, V CE =5V* * Measured under pulsed conditions. Pulse width 300µS. Duty cycle ⱕ2%.