SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 ISSUE 3 DECEMBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 1mA 10mA 100mA 1A 0.1 Collector-Base Voltage 0 Collector-Emitter Voltage 10mA 1mA 100mA 1A IC-Collector Current VCE(sat) v IC VCE=10V 0.9 +100 °C 0.8 IC/IB=10 -55 °C +25 °C +100 °C 0.4 -55 °C 0.2 0 1mA 10mA 100mA 1A 0 10mA 1mA 100mA IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 1A 1 VCE=10V 0.8 0.1 0.6 0.4 -55 °C +25 °C +100 °C 0.01 0.2 1mA 10mA 100mA 1A IC-Collector Current VBE(on) v IC 0.001 0.1 VALUE UNIT VCBO 300 V VCEO 300 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 500 mA Peak Pulse Current ICM Base Current IB Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.6 +25 °C SOT23 ABSOLUTE MAXIMUM RATINGS. VCE(sat) v IC 0 E C B IC-Collector Current 0.9 497 SYMBOL 0.1 100 PARTMARKING DETAIL PARAMETER 0.2 200 FMMT597 -55 °C +25 °C +100 °C 0.3 0.2 300 COMPLIMENTARY TYPE IC/IB=10 0.4 IC/IB=10 IC/IB=50 0.3 400 ✪ 0.5 0.4 0 FMMT497 HIGH PERFORMANCE TRANSISTOR DC 1s 100ms 10ms 1ms 100µs 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area 1000 MIN. MAX. 1 A 200 mA 500 mW -55 to +150 °C PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 300 V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) 300 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 100 nA VCB=250V Collector Cut-Off Current ICES 100 nA VCES=250V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.3 V V IC=100mA, IB=10mA IC=250mA, IB=25mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=250mA, IB=25mA Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=250mA, VCE=10V Static Forward Current Transfer Ratio hFE 100 80 20 Transition Frequency fT 75 Collector-Base Breakdown Voltage Cobo IC=1mA, VCE=10V IC=100mA, VCE=10V* IC=250mA, VCE=10V* 300 5 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 126 3 - 125 SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 ISSUE 3 DECEMBER 1995 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 1mA 10mA 100mA 1A 0.1 Collector-Base Voltage 0 Collector-Emitter Voltage 10mA 1mA 100mA 1A IC-Collector Current VCE(sat) v IC VCE=10V 0.9 +100 °C 0.8 IC/IB=10 -55 °C +25 °C +100 °C 0.4 -55 °C 0.2 0 1mA 10mA 100mA 1A 0 10mA 1mA 100mA IC-Collector Current IC-Collector Current hFE V IC VBE(sat) v IC 1A 1 VCE=10V 0.8 0.1 0.6 0.4 -55 °C +25 °C +100 °C 0.01 0.2 1mA 10mA 100mA 1A IC-Collector Current VBE(on) v IC 0.001 0.1 VALUE UNIT VCBO 300 V VCEO 300 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 500 mA Peak Pulse Current ICM Base Current IB Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 0.6 +25 °C SOT23 ABSOLUTE MAXIMUM RATINGS. VCE(sat) v IC 0 E C B IC-Collector Current 0.9 497 SYMBOL 0.1 100 PARTMARKING DETAIL PARAMETER 0.2 200 FMMT597 -55 °C +25 °C +100 °C 0.3 0.2 300 COMPLIMENTARY TYPE IC/IB=10 0.4 IC/IB=10 IC/IB=50 0.3 400 ✪ 0.5 0.4 0 FMMT497 HIGH PERFORMANCE TRANSISTOR DC 1s 100ms 10ms 1ms 100µs 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area 1000 MIN. MAX. 1 A 200 mA 500 mW -55 to +150 °C PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 300 V IC=100µA Collector-Emitter Breakdown Voltage VCEO(sus) 300 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µA Collector Cut-Off Current ICBO 100 nA VCB=250V Collector Cut-Off Current ICES 100 nA VCES=250V Emitter Cut-Off Current IEBO 100 nA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.3 V V IC=100mA, IB=10mA IC=250mA, IB=25mA Base-Emitter Saturation Voltage VBE(sat) 1.0 V IC=250mA, IB=25mA Base-Emitter Turn On Voltage VBE(on) 1.0 V IC=250mA, VCE=10V Static Forward Current Transfer Ratio hFE 100 80 20 Transition Frequency fT 75 Collector-Base Breakdown Voltage Cobo IC=1mA, VCE=10V IC=100mA, VCE=10V* IC=250mA, VCE=10V* 300 5 MHz IC=50mA, VCE=10V f=100MHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3 - 126 3 - 125