TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPCA8022-H Switching Regulator Applications Motor Drive Applications 0.5±0.1 Unit: mm • High speed switching • Low drain-source ON-resistance 4 High forward transfer admittance: |Yfs| = 46 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 1 4 3.5±0.2 4.25±0.2 Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V JEDEC ― Gate-source voltage VGSS ±20 V JEITA ― (Note 1) ID 22 IDP 66 A TOSHIBA Pulsed (Note 1) PD 45 W PD 2.8 W DC Drain current Drain power dissipation (Tc=25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) 1.6 EAS 197 mJ IAR 22 A EAR 3.8 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) 8 5 0.8±0.1 1,2,3：SOURCE 5,6,7,8：DRAIN 4：GATE 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration PD (Note 2b) A 0.05 S S Absolute Maximum Ratings (Ta = 25°C) Characteristic 5.0±0.2 0.6±0.1 • • 0.595 0.166±0.05 0.95±0.05 • 0.15±0.05 1 : RDS (ON) = 17 mΩ (typ.) (VGS=10V, ID=11A) 0.05 M A 5 1.1±0.2 Small footprint due to a small and thin package 6.0±0.3 • 1.27 8 5.0±0.2 DC/DC Converter Applications 0.4±0.1 W 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2007-02-09 TPCA8022-H Thermal Characteristics Characteristic Thermal resistance, channel to case (Tc=25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8022-H Type Lot No. * Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V， Tch = 25°C (initial)， L = 0.5 mH， RG = 25 Ω， IAR = 22 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-02-09 TPCA8022-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cutoff current IDSS VDS = 100 V, VGS = 0 V ⎯ ⎯ 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 100 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 11 A ⎯ 17 26 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 11 A 23 46 ⎯ S Drain-source breakdown voltage Gate threshold voltage Input capacitance Ciss ⎯ 2330 ⎯ Reverse transfer capacitance Crss ⎯ 110 ⎯ Output capacitance Coss ⎯ 420 ⎯ ⎯ 1.5 ⎯ ⎯ 4.8 ⎯ ⎯ 14 ⎯ ⎯ 6.7 ⎯ ⎯ 42 ⎯ ⎯ 38 ⎯ ⎯ 9.8 ⎯ Rg Rise time Turn-on time tr ton Turn-off time Total gate charge (gate-source plus gate-drain) 4.7 Ω Switching time Fall time tf toff ID = 11 A VOUT VGS 10 V 0V RL = 4.5Ω Gate-Resistance VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ∼ − 50 V < Duty = 1%, tw = 10 µs Qg Ω ns Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd ⎯ 10 ⎯ Gate switch charge QSW ⎯ 14 ⎯ VDD ∼ − 80 V, VGS = 10 V, ID = 22 A pF nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 66 A ⎯ ⎯ −1.2 V VDSF IDR = 22 A, VGS = 0 V 3 2007-02-09 TPCA8022-H ID – VDS ID – VDS 6 10 4.8 8 16 Drain current ID (A) 5 4.7 20 Common source Ta = 25°C Pulse test 10 Drain current ID (A) 20 4.6 12 4.5 8 4.3 4 16 8 4.8 5 6 Common source Ta = 25°C Pulse test 4.7 4.6 12 4.5 8 4.4 4 VGS = 4.2V VGS = 4V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0 0 1 (V) 1 2 ID – VGS Drain-source voltage VDS (V) Drain current ID (A) Common source VDS = 10 V Pulse test 30 20 Ta = −55°C 100 25 0 0 2 4 6 Gate-source voltage 8 Common source Ta = 25°C Pulse test 0.6 ID = 22 A 0.4 11 0.2 5.5 0 VGS (V) 2 4 Gate-source voltage Common source VDS = 10 V Pulse test 100 Ta = −55°C 25 100 1 1 6 8 10 VGS (V) RDS (ON) – ID 100 Drain-source ON-resistance RDS (ON) (mΩ) (S) ⎪Yfs⎪ – ID 0.1 0.1 (V) 0.8 0 10 1000 10 5 VDS – VGS 1.0 10 4 Drain-source voltage VDS 40 Forward transfer admittance |Yfs| 3 10 10 1 0.1 100 Drain current ID (A) Common source Ta = 25℃ Pulse test VGS = 10 V 1 10 100 Drain current ID (A) 4 2007-02-09 TPCA8022-H RDS (ON) – Ta IDR – VDS 100 50 (A) Common source 22A Drain reverse current IDR Drain-source ON-resistance RDS (ON) (mΩ) Pulse test 40 30 ID = 5.5A,11A 20 VGS = 10 V 10 0 −80 −40 0 40 80 Ambient temperature 120 Ta 10 10 4.5 3 1 1 0.1 0 160 Common source Ta = 25°C Pulse test (°C) −0.2 Capacitance – VDS −0.8 −1.0 (V) Vth – Ta 6.0 (V) Ciss 4.5 Gate threshold voltage Vth (pF) −0.6 −0.4 Drain-source voltage VDS 10000 Capacitance C VGS = 0 V 1000 Coss 100 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 0.1 1 10 Common source 1.5 (V) VDS = 10 V ID = 1 mA Pulse test 0 −80 100 Drain-source voltage VDS 3.0 −40 0 40 Ambient temperature 80 Ta 120 160 (°C) Dynamic input/output characteristics 80 VDS 20 (V) Common source ID = 22 A Ta = 25°C Pulse test 16 12 60 VDD = 20 V 8 40 40 80 4 20 0 0 10 20 Total gate charge Qg 30 Gate-source voltage VGS Drain-source voltage VDS (V) 100 0 40 (nC) 5 2007-02-09 TPCA8022-H 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25℃ 100 Transient thermal impedance rth (°C/W) rth – tw (2) (1) 10 (3) 1 0.1 Single - pulse 0.01 0.0001 0.01 0.001 0.1 1 Pulse width tw 10 100 (s) PD – Ta (W) (1) 2.5 PD – Tc 50 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) ｔ＝10s 40 Drain power dissipation PD Drain power dissipation PD (W) 3.0 2.0 (2) 1.5 1.0 0.5 0 0 40 1000 80 120 Ambient temperature Ta 30 20 10 0 160 (°C) 0 40 80 Case temperature 120 TC 160 (°C) Safe operating area 100 ID max (Pulse) * Drain current ID (A) t =1ms * 10 ID max (Continuous) t =10ms * DC Operation Tc=25℃ 1 0.1 * Single - pulse Ta=25℃ Curves must be derated linearly with increase in temperature. 0.01 0.1 1 VDSS max 10 Drain-source voltage VDS 100 (V) 6 2007-02-09 TPCA8022-H RESTRICTIONS ON PRODUCT USE 070122EAA • The information contained herein is subject to change without notice. 021023_D • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. 021023_A • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. 021023_B • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 060106_Q • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. 070122_C 7 2007-02-09