TOSHIBA TPCP8002

TPCP8002
TOSHIBA Field Effect Transistor
Silicon N-Channel MOS Type (U-MOS IV)
TPCP8002
Notebook PC Applications
Portable Equipment Applications
•
•
•
Lead (Pb)-Free
Small footprint due to small and thin package
Low drain-source ON-resistance
: RDS (ON) = 7 mΩ (typ.)
High forward transfer admittance
:|Yfs| = 36 S (typ.)
Low leakage current
: IDSS = 10 μA (VDS = 20 V)
Enhancement mode
: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 0.2 mA)
0.05 M A
0.475
1
4
0.65
B
2.9±0.1
2.8±0.1
5
8
2.4±0.1
•
•
•
Unit: mm
0.33±0.05
0.05 M B
A
0.8±0.05
S
0.025
S
0.28 +0.1
-0.11
0.17±0.02
+0.13
1.12 -0.12
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
1.12 +0.13
-0.12
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
20
V
Gate-source voltage
VGSS
±12
V
Drain current
DC
(Note 1)
ID
9.1
Pulse
(Note 1)
IDP
36.4
PD
1.68
Drain power dissipation (t = 5 s)
(Note 2a)
A
1．Source
2．Source
3．Source
4．Gate
JEDEC
―
JEITA
―
TOSHIBA
W
Drain power dissipation (t = 5 s)
(Note 2b)
PD
Single pulse avalanche energy
(Note 3)
EAS
21.5
mJ
Avalanche current
IAR
9.1
A
Repetitive avalanche energy
(Note 4)
EAR
0.168
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
0.84
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
0.28 +0.1
-0.11
5．Drain
6．Drain
7．Drain
8．Drain
2-3V1K
Circuit Configuration
8
7
6
5
1
2
3
4
6
5
Marking (Note 5)
8
7
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
8002
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
*
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
4
Lot No.
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TPCP8002
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Rth (ch-a)
74.4
°C/W
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
148.8
°C/W
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8t
Unit : (mm)
(a)
FR-4
25.4 × 25.4 × 0.8t
Unit : (mm)
(b)
Note 3: VDD = 16 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 9.1 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: ● on the lower left of the marking indicates Pin 1.
* Weekly code (3 digits):
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(the last digit of the calendar year)
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TPCP8002
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-off current
IDSS
VDS = 20 V, VGS = 0 V
⎯
⎯
10
μA
V (BR) DSS
ID = 10 mA, VGS = 0 V
20
⎯
⎯
V (BR) DSX
ID = 10 mA, VGS = −12 V
8
⎯
⎯
Vth
VDS = 10 V, ID = 0.2 mA
0.5
⎯
1.2
VGS = 2.5 V, ID = 4.5 A
⎯
10
13.7
VGS = 4.5 V, ID = 4.5 A
⎯
7
10
VDS = 10 V, ID = 4.5 A
18
36
⎯
⎯
3700
⎯
⎯
400
⎯
⎯
450
⎯
⎯
14
⎯
⎯
24
⎯
Gate threshold voltage
Drain-source ON-resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
VGS
Switching time
Fall time
0V
ton
4.7 Ω
Turn-on time
ID = 4.5 A
VOUT
5V
RL = 2.22 Ω
Drain-source breakdown
voltage
tf
V
V
mΩ
S
pF
ns
⎯
30
⎯
⎯
110
⎯
⎯
48
⎯
⎯
8
⎯
⎯
12
⎯
VDD ∼
− 10 V
Turn-off time
Total gate charge
(gate-source plus gate-drain)
toff
Duty <
= 1%, tw = 10 μs
Qg
Gate-source charge 1
Qgs1
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 16 V, VGS = 5 V, ID = 9.1 A
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
36.4
A
⎯
⎯
−1.2
V
VDSF
IDR = 9.1 A, VGS = 0 V
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2007-01-16
TPCP8002
ID – VDS
2
1.8
ID – VDS
20
Common source
Ta = 25°C
Single Pulse test
1.7
ID
(A)
8
6
Drain current
Drain current
ID
(A)
10
1.6
4
1.5
2
3
2
Common source
Ta = 25°C
Single Pulse test
1.9
16
1.8
12
1.7
8
1.6
4
1.5
VGS = 1.4 V
0
0
0.2
0.4
0.6
Drain−source voltage
0.8
VDS
0
1.0
VGS = 1.4 V
0
(V)
0.4
0.8
VDS (V)
Drain−source voltage
(A)
ID
Drain current
100°C
8
4
25°C
Ta = −55°C
0
0.4
0.8
1.2
1.6
Gate−source voltage
VGS
2
Common source
Ta = 25°C
Single Pulse test
0.8
0.6
0.4
ID = 9.1 A
0.2
4.5
2.3
0
2.4
0
(V)
2
4
Forward transfer admittance
Drain−source ON-resistance
RDS (ON) (mΩ)
25°C
|Yfs|
(S)
Ta = −55°C
100°C
10
1
0.1
1
Drain current
10
ID
8
VGS
10
(V)
RDS (ON) – ID
100
Common source
VDS = 10 V
Single Pulse test
6
Gate−source voltage
|Yfs| – ID
100
(V)
VDS – VGS
12
0
VDS
1
Common source
VDS = 10 V
Single Pulse test
16
2
1.6
Drain−source voltage
ID – VGS
20
1.2
(A)
VGS = 2.5 V
10
4.5
1
0.1
100
Common source
Ta = 25°C
Single Pulse test
1
Drain current
4
10
ID
100
(A)
2007-01-16
TPCP8002
RDS (ON) – Ta
IDR – VDS
20
100
Common source
16
IDR
ID = 2.3,4.5,9.1 A
12
2.5 V
8
ID = 2.3,4.5,9.1 A
VGS = 4.5 V
4
0
−80
Ta = 25°C
(A)
Pulse test
Drain reverse current
−40
0
40
80
Ambient temperature
120
Ta
Pulse test
5
VGS = −1 V
1
1
0.1
160
3
10
0
0
−0.2
−0.4
C – VDS
−1
VDS
(V)
80
120
−1.2
Vth – Ta
Vth (V)
1.2
C
Gate threshold voltage
(pF)
Ciss
1000
Coss
Crss
1.0
0.8
0.6
0.4
0.2
0.0
−80
10
Drain−source voltage
20
VDS (V)
(W)
glass-epoxy board (a)
1.6
PD
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
1.2
(Note 2b)
(2)
0.8
0.4
50
100
Ambient temperature
(°C)
200
150
Ta
Common source
Ta = 25°C
5
8
Single Pulse test
8V
12
6
4V
8
VDD = 16 V
4
VGS
2
4
0
20
Total gate charge
(°C)
10
ID = 9.1 A
VDS
16
0
0
0
Ta
160
Dynamic input/output
characteristics
(1) Device mounted on a
(1)
40
(V)
PD – Ta
2.0
0
Ambient temperature
100
VDS
−40
(V)
1
Common source
VDS = −10 V
ID = −200 μA
Pulse test
0
60
40
Qg
VGS
100
0.1
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Drain−source voltage
Capacitance
−0.8
Drain−source voltage
(°C)
10000
Drain power dissipation
−0.6
Gate−source voltage
Drain−source ON-resistance
RDS (ON) (mΩ)
Common source
(nC)
2007-01-16
TPCP8002
rth(j−c) − tw
(°C/W)
1000.0
Device mounted on a glassepoxy board (b) (Note 2b)
rth
100.0
Transient thermal impedance
Device mounted on a glassepoxy board (a) (Note 2a)
10.0
1.0
Single pulse
0.1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe operating area
100
ID max (pulse)*
Drain current
ID
(A)
1 ms*
10
10 ms*
1
0.1
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1
Drain−source voltage
VDSS max
10
VDS
100
(V)
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2007-01-16
TPCP8002
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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