TPCF8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCF8104 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.6 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics JEDEC ― V JEITA ― −30 V TOSHIBA VGSS ±20 V Weight: 0.011 g (typ.) Symbol Rating Unit Drain-source voltage VDSS −30 Drain-gate voltage (RGS = 20 kΩ) VDGR Gate-source voltage DC (Note 1) ID −6 Pulse (Note 1) IDP −24 Drain power dissipation (t = 5 s) (Note 2a) PD 2.5 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) EAS 5.8 mJ Avalanche current IAR −3 A EAR 0.25 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Repetitive avalanche energy (Note 4) 2-3U1A A Circuit Configuration 8 7 6 5 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-16 TPCF8104 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Rth (ch-a) 50.0 °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.6 °C/W Marking (Note 5) Lot code (month) Lot No. F3D Part No. (or abbreviation code) Product-specific code Pin #1 Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ● on the lower leftof the marking indicates Pin 1. 2 2006-11-16 TPCF8104 Electrical Characteristics (Ta = 25°C) Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ Vth VDS = −10 V, ID = −1mA −0.8 ⎯ −2.0 VGS = −4.5 V, ID = −3.0 A ⎯ 29 38 VGS = −10 V, ID = −3.0A ⎯ 21 28 VDS = −10 V, ID = −3.0A 4.8 9.6 ⎯ ⎯ 1760 ⎯ ⎯ 200 ⎯ ⎯ 210 ⎯ ID = −3.0 A VOUT ⎯ 2.8 ⎯ RL = 5 Ω Characteristics ⎯ 12 ⎯ ⎯ 22 ⎯ ⎯ 90 ⎯ ⎯ 34 ⎯ ⎯ 4.7 ⎯ ⎯ 7.2 ⎯ Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time tr Turn-on time ton VDS = −10 V, VGS = 0 V, f = 1 MHz VGS −10 V 4.7 Ω Switching time Fall time 0V tf VDD ∼ − −15 V Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge1 Qgs1 Gate-drain (“miller”) charge Qgd Duty < = 1%, tw = 10 μs VDD ∼ − −24 V, VGS = −10V, ID = −6.0 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −24 A VDSF IDR = −6.0 A, VGS = 0 V ⎯ ⎯ 1.2 V 3 2006-11-16 TPCF8104 ID – VDS ID – VDS -10 -3 -4 -8 -10 (A) -3.5 -2.5 -3 -2.4 -2 -2.3 Common source Ta = 25°C Pulse test -3 -3.5 -2.6 (A) Drain current ID Common source Ta = 25°C Pulse test -2.7 -2.8 -4.5 -10 Drain current ID -5 -2.8 -4.5 -2.7 -2.6 -6 -2.5 -4 -2.4 -2.3 -2 -1 -2.2 -2.2 VGS = -2.1V 0 0 -0.2 -0.6 -0.4 Drain-source voltage -0.8 VDS 0 0 -1.0 (V) VGS = -2.1 V -1 -3 -2 Drain-source voltage ID – VGS -4 VDS -0.5 Common source Common source (V) Drain-source voltage -6 8 Ta = −55°C 100 4 Ta = 25℃ -0.4 Pulse test VDS (A) Drain current ID VDS = -10 V Pulse test -0.3 -0.2 ID = -6 A -0.1 -3 25 0 0 -1 -2 -1.5 -3 Gate-source voltage -4 VGS 0 0 -5 (V) -2 -4 |Yfs| (S) -8 VGS -10 (V) RDS (ON) – ID 1000 Common source common source Ta = 25°C VDS = -10 V Pulse test Ta = −55°C Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance -6 Gate-source voltage ⎪Yfs⎪ – ID -100 (V) VDS – VGS -10 -8 -5 -10 25 100 -1 Pulse test 100 -4.5 VGS = -10 V 10 -0.1 -0.1 -1 -10 1 -0.1 -100 Drain current ID (A) -1 -10 -100 Drain current ID (A) 4 2006-11-16 TPCF8104 RDS (ON) – Ta IDR – VDS 50 -100 Common source -3A 40 Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) ( mΩ) Common source ID = -6A Pulse test -1.5A ID =− 6A VGS = -4.5 V 30 -3A -1.5A 20 VGS = -10 V 10 Ta = 25°C Pulse test -4.5 -10 -10 -3 -2 VGS = 0 V -1 0 −80 −40 0 40 80 120 -1 0 160 0.8 0.4 Ambient temperature Ta (°C) 1.2 Drain-source voltage Capacitance – VDS 2 1.6 VDS (V) Vth – Ta -4 10000 Common source Vth (V) 1000 Coss 100 10 Gate threshold voltage Capacitance C (pF) Ciss Crss Common source VGS = 0 V f = 1 MHz VDS = -10 V ID = -1 mA -3 Pulse test -2 -1 Ta = 25°C -10 Drain-source voltage VDS 0 −80 -100 −40 (V) 0 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 1.5 (1) DC 1 (2) t = 5 s 0 0 (2) DC 40 80 120 -16 (V) 2 0.5 160 -40 VDS (1) t = 5 s 120 Dynamic input/output characteristics Drain-source voltage Drain power dissipation PD (W) 2.5 80 Ambient temperature Ta (°C) PD – Ta 3 40 -30 Ambient temperature Ta (°C) VDD = -24 V -6 -12 -20 -8 Common source ID = -6 A VGS -10 Ta = 25°C -4 Pulse test 0 0 160 -12 VDS -10 -20 -30 -40 VGS (V) -1 Gate-source voltage 1 -0.1 0 -50 Total gate charge Qg (nC) 5 2006-11-16 TPCF8104 rth – tw 1000 Device mounted on a glass-epoxy board (b) (Note 2b) Transient thermal impedance rth (°C/W) 100 Device mounted on a glass-epoxy board (a) (Note 2a) 10 1 0.1 1m 10 m 100 m 1 Pulse width 10 100 1000 tw (s) Safe operating area −100 Drain current ID (A) ID max (pulse)* 1 ms* −10 10 ms* −1 *:Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature −0.1 −0.1 −1 Drain-source voltage VDSS max −10 −100 VDS (V) 6 2006-11-16 TPCF8104 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-16