TOSHIBA TPCF8103_07

TPCF8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8103
Notebook PC Applications
Portable Equipment Applications
Unit: mm
•
Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 4.7S (typ.)
•
Low leakage current: IDSS = -10 μA (max) (VDS = -20 V)
•
Enhancement-model: Vth = -0.5 to -1.2 V
(VDS = -10 V, ID = -200μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
JEDEC
―
V
JEITA
―
-20
V
TOSHIBA
VGSS
±8
V
Weight: 0.011 g (typ.)
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
Drain-gate voltage (RGS = 20 kΩ)
VDGR
Gate-source voltage
DC
(Note 1)
ID
-2.7
Pulse
(Note 1)
IDP
-10.8
Drain power dissipation
(t = 5 s)
(Note 2a)
PD
2.5
W
Drain power dissipation
(t = 5 s)
(Note 2b)
PD
0.7
W
Single pulse avalanche energy (Note 3)
EAS
1.2
mJ
Avalanche current
IAR
-1.35
A
EAR
0.25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Drain current
Repetitive avalanche energy
(Note 4)
2-3U1A
A
Circuit Configuration
8
7
6
5
1
2
3
4
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
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TPCF8103
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Rth (ch-a)
50.0
°C/W
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
178.6
°C/W
Marking (Note 5)
Lot code (month)
Part No.
(or abbreviation code)
Lot No. (weekly code)
F3C
Product-specific code
Pin #1
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: VDD = -16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = -1.35 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature.
Note 5: Black round marking “●” locates on the left lower side of parts number “F3C” indicates terminal No.1.
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TPCF8103
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±10
μA
Drain cut-off current
IDSS
VDS = -20 V, VGS = 0 V
⎯
⎯
-10
μA
V (BR) DSS
ID = -10 mA, VGS = 0 V
-30
⎯
⎯
V (BR) DSX
ID = -10 mA, VGS = 8 V
-12
⎯
⎯
VDS = -10 V, ID = -200μA
-0.5
⎯
-1.2
VGS = -1.8V, ID = -0.7 A
⎯
215
300
VGS = -2.5 V, ID = -1.4 A
⎯
110
160
VGS = -4.5 V, ID = -1.4A
⎯
72
110
VDS = -10 V, ID = -1.4 A
2.4
4.7
⎯
⎯
470
⎯
⎯
70
⎯
⎯
80
⎯
⎯
5
⎯
⎯
9
⎯
⎯
8
⎯
⎯
26
⎯
⎯
6
⎯
⎯
4
⎯
⎯
2
⎯
Gate threshold voltage
Vth
Drain-source ON resistance
RDS (ON)
Forward transfer admittance
|Yfs|
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Rise time
tr
Turn-on time
ton
VDS = -10 V, VGS = 0 V, f = 1 MHz
VGS
-5 V
4.7 Ω
Switching time
Fall time
ID = -1.4 A
0V
RL = 7.14 Ω
Drain-source breakdown voltage
tf
VOUT
VDD ∼
− -10 V
Turn-off time
toff
Total gate charge
(gate-source plus gate-drain)
Qg
Gate-source charge
Qgs
Gate-drain (“miller”) charge
Qgd
Duty <
= 1%, tw = 10 μs
VDD ∼
− -16 V, VGS = -5 V,
ID = -2.7 A
V
V
mΩ
S
pF
ns
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse
current
Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
IDRP
⎯
⎯
⎯
-10.8
A
VDSF
IDR = -2.7A, VGS = 0 V
⎯
⎯
1.2
V
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2006-11-16
TPCF8103
ID – VDS
ID – VDS
−5
−10
−2.5
−4
−4.5
−2.8
−3
−3.5
−1.8
−3
−2
VGS = −1.5 V
−1
0
0
−0.4
−0.6
Drain-source voltage
−0.8
−3
−4
−6
−2
−4
−1.8
VGS = −1.5 V
0
0
−1.0
−1
VDS (V)
−2
(V)
(V)
Common source
Ta = 25°C
Pulse test
−0.8
VDS
−3
Ta = 25°C
−2
0
0
Drain-source voltage
Drain current ID
VDS
−5
VDS – VGS
Common source
VDS = −10 V
Pulse test
Ta = −55°C
−1
Ta = 100°C
−0.5
−1.0
−1.5
Gate-source voltage
−2.0
−0.6
−0.4
ID = −2.7 A
−0.2
−1.4 A
−0.7 A
0
0
−2.5
−2
VGS (V)
−4
Gate-source voltage
Common source
Ta = 25°C
Pulse test
Pulse test
Ta = −55°C
Ta = 25°C
Ta = 100°C
1
−0.1
−1
−8
VGS (V)
Common source
VDS = −10 V
Drain-source ON resistance
RDS (ON) (mΩ)
|Yfs| (S)
1000
10
−6
RDS (ON) – ID
|Yfs| – ID
100
Forward transfer admittance
−4
−1.0
(A)
−4
−3
Drain-source voltage
ID – VGS
−5
Common source
Ta = 25°C
Pulse test
−3.5
−2
Common source
Ta = 25°C
Pulse test
−0.2
−2.5
−5
−8
(A)
−5
−2.8
−4.5
Drain current ID
Drain current ID
(A)
−4
−2
−1.8 V
−2.5 V
100
VGS = −4.5 V
10
−0.1
−10
Drain current ID (A)
−1
−10
Drain current ID (A)
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TPCF8103
RDS (ON) – Ta
IDR – VDS
−100
ID = −1.4 A
Common source
Pulse test
VGS = −1.8 V
200
ID = −1.4 A
ID = −2.7 A
150
100
50
−0.7 A
−2.5 V
ID = −0.7, −1.4, −2.7 A
−4.5 V
0
−80
−40
0
40
80
120
Ta = 25°C
(A)
−0.7 A
Drain reverse current IDR
Drain-source ON resistance
RDS (ON) (mΩ)
250
Pulse test
−10
−1.8
−1
−1
0
160
−4.5
−2.5
0.4
Ambient temperature Ta (°C)
0.8
(V)
Vth
1000
Gate threshold voltage
(pF)
Capacitance C
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
−1
−10
Drain-source voltage
VDS
−1.5
−0.5
(V)
1
(2) t = 5 s
(2) DC
80
120
160
120
Ambient temperature Ta (°C)
−8 V
−8
−4 V
VDS
−12
VDD = −16 V −6
VGS
−8
Common source
−4
ID = −2.7 A
Ta = 25°C
−4
−2
Pulse test
0
0
160
−10
−16
VDS
(1) DC
40
80
Dynamic input/output characteristics
1.5
0
0
40
−20
2
0.5
0
(V)
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
(1) t = 5 s
−40
Ambient temperature Ta (°C)
−100
Drain-source voltage
Drain power dissipation PD (W)
2.5
(V)
−1.0
PD – Ta
3
VDS
2.0
Common source
VDS = −10 V
ID = −200 μA
Pulse test
−0.0
−80
10
−0.1
1.6
Vth – Ta
−2.0
100
1.2
Drain-source voltage
Capacitance – VDS
10000
VGS = 0 V
−2
−4
−6
−8
VGS (V)
Common source
Gate-source voltage
300
0
−10
Total gate charge Qg (nC)
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2006-11-16
TPCF8103
rth – tw
1000
Transient thermal
impedance rth (°C/W)
Device mounted on a glass-epoxy board (b) (Note 2b)
100
Device mounted on a glass-epoxy board (a) (Note 2a)
10
1
1m
10m
100m
1
Pulse width
10
100
1000
tw (s)
Safe operating area
Drain current ID
(A)
-100
-10
ID max (pulse)*
1 ms*
10 ms*
-1
*: Single pulse
Ta = 25°C
Curves must be derated linearly
with increase in temperature
-0.1
-0.1
-1
Drain-source voltage
VDSS max
-10
-100
VDS (V)
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2006-11-16
TPCF8103
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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