TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8003-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications • High speed switching 5 0.475 1 4 B 0.65 • Small gate charge: QSW = 7.5 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 130 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.4 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 100V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1mA) 0.05 M B 2.9±0.1 A 0.8±0.05 0.025 S S 0.28 +0.1 -0.11 0.17±0.02 +0.13 1.12 -0.12 1.12 +0.13 -0.12 Absolute Maximum Ratings (Ta = 25°C) Characteristic 1．Source 5．Drain 2．Source 6．Drain 0.28 +0.1 -0.11 Symbol Rating Unit 3．Source 7．Drain Drain-source voltage VDSS 100 V 4．Gate 8．Drain Drain-gate voltage (RGS = 20 kΩ) VDGR 100 V JEDEC ― Gate-source voltage VGSS ±20 V JEITA ― (Note 1) ID 2.2 IDP 8.8 A TOSHIBA Pulsed (Note 1) PD 1.68 W PD 0.84 W EAS 3.93 mJ IAR 2.2 A EAR 0.016 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) 2.8±0.1 Small footprint due to a small and thin package 0.05 M A 8 2.4±0.1 • Unit: mm 0.33±0.05 Weight: 0.017 g (typ.) Circuit Configuration Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 2-3V1K 8 7 6 5 1 2 3 4 8 7 6 5 8003H ※ 1 2 3 4 Lot No. 1 2007-06-22 TPCP8003-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Max Unit Rth (ch-a) 74.4 °C/W Rth (ch-a) 148.8 °C/W Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 1 mH, RG = 1 Ω, IAR = 2.2A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2007-06-22 TPCP8003-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 100 V, VGS = 0 V ⎯ ⎯ 10 μA Drain-source breakdown voltage Gate threshold voltage V (BR) DSS ID = 10 mA, VGS = 0 V 100 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 60 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 VGS = 4.5 V, ID = 1.1 A ⎯ 140 190 VGS = 10 V, ID = 1.1 A ⎯ 130 180 VDS = 10 V, ID = 1.1 A 2.7 5.4 ⎯ ⎯ 360 ⎯ ⎯ 22 ⎯ ⎯ 75 ⎯ ⎯ 7 ⎯ ⎯ 14 ⎯ Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr VGS Turn-on time ton Fall time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain (“Miller”) charge Qgd 3 ⎯ VDD ∼ − 50 V < Duty = 1%, tw = 10 μs ⎯ 17 ⎯ VDD ∼ − 80 V, VGS = 10 V, ID = 2.2 A ⎯ 7.5 ⎯ VDD ∼ − 80 V, VGS = 5 V, ID = 2.2 A ⎯ 4.5 ⎯ ⎯ 1.6 ⎯ ⎯ 1.3 ⎯ Gate switch charge QSW ⎯ 2.0 ⎯ VDD ∼ − 80 V, VGS = 10 V, ID = 2.2 A V mΩ S pF ns ⎯ tf Turn-off time 0V 4.7 Ω Switching time ID = 1.1 A VOUT 10 V RL = 45.5Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz V nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 8.8 A ⎯ ⎯ −1.2 V VDSF IDR = 2.2 A, VGS = 0 V 3 2007-06-22 TPCP8003-H ID – VDS 4 3.5 6 6 4.5 4.5 10 3.25 ID 3 6 Common source Ta = 25°C Pulse test 3.75 8 3.75 5 Drain current Drain current 3.5 5 3.25 8 (A) 3 8 ID (A) Common source Ta = 25°C Pulse test ID – VDS 10 2 2.75 1 4 3 2 2.75 VGS = 2.5 V 0 0 0.2 0.4 0.8 0.6 Drain-source voltage VDS VGS = 2.5 V 0 1 0 1 (V) 2 Drain-source voltage ID – VGS (V) (V) Common source Ta = 25°C Pulse test 0.8 VDS Drain-source voltage Drain current ID (A) 6 4 100 Ta = −55°C 2 25 0 1 3 2 Gate-source voltage 4 VGS 0.6 0.4 ID = 2.2 A 0.2 0.5 0 5 1.1 0 2 (V) 4 25 10 Ta = −55°C 100 1 0.1 0.1 1 Drain current 10 VGS 12 (V) Common source Ta = 25°C Pulse test VGS = 4.5 V 100 10 0.1 10 ID 8 RDS (ON) – ID 1000 Common source VDS = 10 V Pulse test Drain-source ON-resistance RDS (ON) (mΩ) |Yfs| 100 6 Gate-source voltage ⎪Yfs⎪ – ID (S) VDS VDS – VGS Common source VDS = −10 V Pulse test Forward transfer admittance 5 4 1 8 0 3 (A) 10 1 Drain current 4 10 ID (A) 2007-06-22 TPCP8003-H RDS (ON) – Ta IDR – VDS 10 IDR 250 ID = 2.2A 1.1A 200 ID = 2.2A 1.1A 150 VGS = 4.5 V 100 10 V 50 −80 −40 Common source Ta = 25°C Pulse test (A) Common source Pulse test Drain reverse current 0 40 Ambient temperature 80 120 Ta 10 1 0.1 160 3 5 0 0.2 (°C) 1 0 0.4 0.6 Vth (V) Gate threshold voltage Coss 10 Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 1.5 1 Common source VDS = 10 V ID = 1 mA Pulse test 0.5 0 −80 100 VDS 2 −40 0 (V) (V) (1) Drain-source voltage 1.2 (2) 0.8 0.4 40 80 Ambient temperature 120 Ta 160 (°C) 140 (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) ｔ＝5s 1.6 80 Dynamic input/output characteristics VDS (W) 2 40 Ambient temperature 120 Ta 80 40 20 12 40 8 VDD = 80 V VDS 6 40 4 VGS 20 2 1 2 3 4 5 Total gate charge (°C) 5 10 20 VDD = 80 V 60 0 0 160 14 Common source I = 2.2 A 120 D Ta = 25°C Pulse test 100 6 7 Qg (nC) 8 9 (V) 1 2.5 PD – Ta PD (V) VGS (pF) Capacitance C 100 Drain-source voltage Drain power dissipation VDS 3 Ciss 0 1.2 1.0 Vth – Ta Capacitance – VDS 0 0.8 Drain-source voltage 1000 1 0.1 VGS = -1V Gate-source voltage Drain-source ON-resistance RDS (ON) (mΩ) 300 0 2007-06-22 TPCP8003-H rth – tw Transient thermal impedance rth (°C/W) 1000 (1)Device mounted on a glass-epoxy board (a) (Note 2a) (2)Device mounted on a glass-epoxy board (b) (Note 2b) (2) (1) 100 10 1 Single - pulse 0.1 0.0001 0.001 0.01 0.1 1 Pulse width tw 10 100 1000 (s) Safe operating area 10 ID max (Pulse) * t = 1 ms* Drain current ID (A) 100 t = 10 ms* 1 0.1 * Single - pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 10 Drain-source voltage VDSS max 100 VDS 1000 (V) 6 2007-06-22 TPCP8003-H RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-06-22