2SC4672 NPN Silicon Epitaxial Silicon Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Description The 2SC4672 is designed for low frequency amplifier applications. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.1V At IC/IB=1A/50mA REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. REF. G H I J K L M o Absolute Maximum Ratings at TA=25 C Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO VEBO Collector-Emitter Voltage 50 Emitter-Base Voltage 6 V V IC Collector Current (DC) Collector Current (Pulse) 2 Total Power Dissipation Junction and Storage Temperature 2 PD TJ,Tstg A 5 W C -55~+150 O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Symbol BVCBO BVCEO BVEBO I CBO I EBO *VCE(sat) Min 60 50 6 - Typ. - - 0.1 - Max 100 100 0.35 *hFE 120 400 fT 210 Output Capacitance Cob 25 ≦ ≦ Pulse width 380 s, Duty Cycle 2% Measured under pulse condition. * µ DC Current Gain Gain-Bandwidth Product Unit V V V nA nA V MH z pF Test Conditions I C=50µA,IE=0 I C=1mA,IB=0 I E=50µA,IC=0 VCB= 60V,IE=0 VEB=5V,IC=0 I C=1A,IB=50mA VCE= 2 V, I C=500 mA VCE= 2 V, IC=500mA,f=100MHz VCB=10V , f=1MHz,IE=0 Classification of hFE Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A A 120~240 B 200~400 Any changing of specification will not be informed individual Page 1 of 2 2SC4672 Elektronische Bauelemente NPN Silicon Epitaxial Silicon Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2