SECOS 2SC4672

2SC4672
NPN Silicon
Epitaxial Silicon Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-89
Description
The 2SC4672 is designed for low
frequency amplifier applications.
Features
* Excellent DC Current Gain Characteristics
* Low Saturation Voltage, Typically VCE(SAT)=0.1V
At IC/IB=1A/50mA
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
REF.
G
H
I
J
K
L
M
o
Absolute Maximum Ratings at TA=25 C
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
V
VCEO
VEBO
Collector-Emitter Voltage
50
Emitter-Base Voltage
6
V
V
IC
Collector Current (DC)
Collector Current (Pulse)
2
Total Power Dissipation
Junction and Storage Temperature
2
PD
TJ,Tstg
A
5
W
C
-55~+150
O
o
ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Symbol
BVCBO
BVCEO
BVEBO
I CBO
I EBO
*VCE(sat)
Min
60
50
6
-
Typ.
-
-
0.1
-
Max
100
100
0.35
*hFE
120
400
fT
210
Output Capacitance
Cob
25
≦
≦
Pulse
width
380
s,
Duty
Cycle
2%
Measured
under
pulse
condition.
*
µ
DC Current Gain
Gain-Bandwidth Product
Unit
V
V
V
nA
nA
V
MH z
pF
Test Conditions
I C=50µA,IE=0
I C=1mA,IB=0
I E=50µA,IC=0
VCB= 60V,IE=0
VEB=5V,IC=0
I C=1A,IB=50mA
VCE= 2 V, I C=500 mA
VCE= 2 V, IC=500mA,f=100MHz
VCB=10V , f=1MHz,IE=0
Classification of hFE
Rank
Range
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
A
120~240
B
200~400
Any changing of specification will not be informed individual
Page 1 of 2
2SC4672
Elektronische Bauelemente
NPN Silicon
Epitaxial Silicon Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 2