PZT987A PNP Silicon Planar Elektronische Bauelemente Medium Power High Gain Transistor RoHS Compliant Product SOT-223 Description The PZT987A is designed for battery powered circuits and fast charge converters. Features * Gain Of 200 At Ic=2A And Very Low Saturation Voltage REF. A C D E I H 9 8 7A Date Code B C E Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 REF. B J 1 2 3 4 5 o MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified) Symbol VCBO VCEO VEBO IC I CM PD TJ,Tstg Parameter Value Units Collector-Base Voltage -25 V Collector-Emitter Voltage Emitter-Base Voltage -25 Collector Current (DC) -3 V V A Collector Current (Pulse) -6 A 2 W -5 Total Power Dissipation Junction and Storage Temperature -55~+150 C O *The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min.. o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Cutoff Current Symbol BVCBO *BVCEO BVEBO I CBO Emitter-Base Cutoff Current I EBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage DC Current Gain Gain-Bandwidth Product Iutput Capacitance Output Capacitance On-Time Off-Time *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cib Cob Ton Toff Min -25 -25 -5 300 250 200 100 100 - Typ. -0.8 225 25 35 400 Max - Unit V V V -100 -100 nA nA -250 -450 mV -500 -1 - V V 800 - MH z pF pF - nS Test Conditions I C=-100µA, I E=0 I C=-10mA, I B=0 I E=-100µA, IC=0 VCB=-15V, I E=0 VEB=- 4V,I C=0 I C=-1A,IB=-10 mA I C=-2A,IB=-20mA I C=-3A,IB=-100mA I C=-1A,IB=-10mA I C=-1A,VCE=-2V VCE=- 2 V, I C=-10 mA VCE=- 2 V, I C=-1 A VCE=- 2 V, I C=- 2A VCE=- 2 V, I C=- 6A VCE=- 5 V, IC=-50 mA,, f=50MHz VCB=-0.5V , f=1MHz VCB=-10 V , f=1MHz VCC=-10V,IC=- 500mA ,IB1=IB2=- 50mA *Measured under pulse condition. Pulse width = 300µs, Duty Cycle≦2% http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 PZT987A Elektronische Bauelemente PNP Silicon Planar Medium Power High Gain Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page2 of 2