2SD2098 NPN Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 Description The 2SD2098 is an epitaxial planar type NPN silicon transistor. Features * Excellent DC Current Gain Characteristics * Low Saturation Voltage, Typically VCE(SAT)=0.25V At IC/IB=4A/0.1A REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. REF. G H I J K L M o Absolute Maximum Ratings at TA=25 C Symbol Value Units VCBO Collector-Base Voltage Parameter 50 V VCEO VEBO Collector-Emitter Voltage 20 Emitter-Base Voltage 6 IC I CP PD TJ,Tstg Collector Current (DC) Collector Current (Pulse)* 1 V V A 10 5 2 Total Power Dissipation Junction and Storage Temperature 0.5 (2.0* ) A W O C -55~+150 *1: Single pulse, PW=10ms *2: When mounted on a 40*40*0.7mm ceramic board o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Symbol BVCBO BVCEO BVEBO I CBO I EBO *VCE(sat) Min 50 20 6 - Typ. - - 0.25 - Max - 0.5 0.5 1 *hFE 120 390 fT 150 Output Capacitance Cob 30 ≦ ≦ Pulse width 300 s, Duty Cycle 2% Measured under pulse condition. * µ DC Current Gain Gain-Bandwidth Product Unit V V V uA uA V MH z pF Test Conditions I C=50µA,IE=0 I C=1mA,IB=0 I E=50µA,IC=0 VCB=40V,IE=0 VEB=5V,IC=0 I C=4A,IB=0.1A VCE= 2 V, I C=0.5 A VCE= 6 V, IC=50mA,f=100MHz VCB=20V , f=1MHz,IE=0 Classification of hFE Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Q 120~270 R 180~390 Any changing of specification will not be informed individual Page 1 of 3 2SD2098 Elektronische Bauelemente NPN Silicon Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SD2098 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Silicon Epitaxial Planar Transistor Any changing of specification will not be informed individual Page 3of 3