PZT559 PNP Silicon Planar Elektronische Bauelemente High Current Transistor RoHS Compliant Product SOT-223 Description The PZT559 is designed for general purpose switching and amplifier applications. Features * Excellent Gain Characteristic Specified Up To 3 Amps. REF. * 4 Amps Continuous Current, Up To 10 Amps Peak Current * Very Low Saturation Voltages A C D E I H 5 5 9 Date Code B C E Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 o MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified) Symbol B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Value Units VCBO Collector-Base Voltage -180 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -140 IC I CM PD TJ,Tstg Parameter REF. -4 V V A Collector Current (Pulse) -10 A Total Power Dissipation 3 -6 Collector Current (DC) Junction and Storage Temperature -55~+150 W C O *The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min.. o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage DC Current Gain Gain-Bandwidth Product Symbol BVCBO BVCER *BVCEO BVEBO I CBO I CER I EBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Min -180 -180 -140 -6 100 100 75 - Typ. 200 140 10 110 40 68 1030 Max - Unit V V V V Test Conditions I C=-100µA, I E=0 I C=-1µA, RB ≦ 1K Ω I C=-10mA, I B=0 I E=-100µA, IC=0 -50 -50 -10 -60 -120 nA nA nA VCB=-150V, I E=0 VCB=-150V,R ≦1KΩ VEB=- 6V,I C=0 -150 -370 -1.11 -0.95 300 - Off-Time *Measured under pulse condition. Pulse width = 300µs, Duty Cycle≦2% Output Capacitance On-Time http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Cob Ton Toff mV V V MH z pF nS I C=-100m A,IB=-5mA I C=-500 A,IB=-50mA I C=-1A,IB=-100mA I C=-3A,IB=-300mA I C=-3A,IB=-300mA I C=-3A,VCE=-5V VCE=- 5 V, I C=-10 mA VCE=- 5 V, I C=-1 A VCE=- 5 V, I C=- 3A VCE=- 5 V, I C=- 10 A VCE=- 10 V, IC=-100mA,, f=50MHz VCB=-20 V , f=1MHz VCC=-50V,IC=- 1A ,IB1=IB2=- 100mA Any changing of specification will not be informed individual Page 1 of 2 PZT559 Elektronische Bauelemente PNP Silicon Planar High Current Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2