PZT358 NPN Transistor Elektronische Bauelemente Silicon Planar High Current Transistor RoHS Compliant Product SOT-223 A suffix of "-C" specifies halogen & lead-free Description The PZT358 is designed for general purpose switching and amplifier applications. C D E 4 A Features 1 5 I * 6Amps Continous Current, Up To 10Amps Peak Current * Excellent Gain Characteristic, Specified Up To 10Amps * Very Low Saturation Voltages J REF. Date Code B C Min. 6.70 2.90 0.02 0 0.60 0.25 A C D E I H 3 5 8 E 2 Max. 7.30 3.10 0.10 10 0.80 0.35 o MAXIMUM RATINGS* (Tamb =25 C, unless otherwise specified) Symbol Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 B J 1 2 3 4 5 Value Units Collector-Base Voltage 200 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 100 V V PD TJ,Tstg Parameter REF. VCBO IC B H 3 6 Collector Current (DC) 6 Collector Current (Pulse) 10 Total Power Dissipation 3 Junction and Storage Temperature -55~-150 A W C O *The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min.. o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance On-Time Off-Time Symbol BVCBO *BVCEO BVEBO I CBO I CES I EBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Ton Toff Min 200 100 6 100 100 50 20 - Typ. - Max 10 Uni V V V nA Test Conditions I C= 100µA, I E=0 I C= 10mA, I B=0 I E= 100µA, IC=0 VCB= 150V, I E=0 - 50 nA VCES=100V 10 50 150 340 1.25 1.1 300 - nA 200 130 35 55 1650 VEB= 6V, IC=0 I C= 100mA, I B= 5mA mV I C= 2A, I B= 100mA I C= 5A, I B= 500mA V I C= 5A, I B= 500mA V VCE= 2V, I C= 5A VCE= 2V, I C= 10mA VCE= 2V, I C= 2A VCE= 2V, I C= 4A VCE= 2V, I C= 10A MH z VCE= 10V, IC= 100mA,, f=50MHz pF VCB= 10V, IE=0, f=1MHz nS VCC=10V,IC=1A,IB1=IB2=100mA *Measured under pulse condition. Pulse widthЉ Љ 300ȝs, Duty CycleЉ Љ 2% Spice parameter data is available upon request for this device. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 PZT358 Elektronische Bauelemente NPN Transistor Silicon Planar High Current Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2