Inchange Semiconductor Product Specification BDX65 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・DARLINGTON ・Complement to type BDX64 APPLICATIONS ・Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current(peak) 16 A IB Base current 0.2 A PT Total power dissipation 117 W Tj Junction temperature -55~200 ℃ Tstg Storage temperature -55~200 ℃ MAX UNIT 1.5 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BDX65 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0;L=25mH VCEsat Collector-emitter saturation voltage IC=5A ;IB=20mA 2 V VBE Base-emitter voltage IC=5A;VCE=3V 3 V ICBO Collector cut-off current VCB=60V; IE=0 TC=150℃ 0.4 3 mA ICEO Collector cut-off current VCE=30V; IB=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 5 mA VF Diode forward voltage IF=3A hFE-1 DC current gain IC=1A ; VCE=3V hFE-2 DC current gain IC=5A ; VCE=3V hFE-3 DC current gain IC=10A ; VCE=3V Transition frequency IC=5A ; VCE=3V;f=1MHz fT CONDITIONS MIN TYP. 60 UNIT V 1.8 2 MAX V 1500 1000 1500 7 MHz Inchange Semiconductor Product Specification BDX65 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3