Inchange Semiconductor Product Specification BUV28 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・High frequency and efficiency converters ・Switching regulators ・Motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 2 A 70 W 150 ℃ -65~150 ℃ MAX UNIT 1.785 ℃/W Ptot Tj Tstg Total power dissipation TC=25℃ Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification BUV28 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=30m A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=0.3 A 0.7 V VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A 1.5 V Base-emitter saturation voltage IC=6A; IB=0.6A 2.0 V ICBO Collector cut-off current VCB =300V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA 1.0 ms 1.5 μs 0.3 μs VBEsat CONDITIONS MIN TYP. MAX 200 UNIT V Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=5A;VCC=150V IB1=-IB1=0.5A; 2 Inchange Semiconductor Product Specification BUV28 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3