Inchange Semiconductor Product Specification BUV27 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Fast switching speed APPLICATIONS ・For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter 导体 半 电 固 Absolute maximum ratings (Tc=25℃) SYMBOL PARAMETER R O T UC OND CONDITIONS VALUE UNIT 240 V 120 V 7 V Collector current (DC) 12 A ICM Collector current (peak) 20 A IB Base current 4 A IBM Base current (peak) 6 A Ptot Total power dissipation 85 W 175 ℃ -65~175 ℃ MAX UNIT 1.76 ℃/W EMIC VCBO Collector-base voltage Open emitter VCEO Collector-emitter voltage Open base Emitter-base voltage Open collector VEBO IC Tj Tstg S E G N A H C IN TC=25℃ Max.operating junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification BUV27 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 VCEsat-1 Collector-emitter saturation voltage VCEsat-2 MIN TYP. MAX 120 UNIT V 30 V IC=4A ;IB=0.4 A 0.7 V Collector-emitter saturation voltage IC=8A; IB=0.8A 1.5 V Base-emitter saturation voltage IC=8A; IB=0.8A 2 V ICEX Collector cut-off current VCE =240V;VBE = -1.5 V TC=125℃ 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA VBEsat 导体 半 电 固 Switching times resistive load 7 ton Turn-on time ts Storage time tf Fall time D N O IC M E S GE N A H INC R O T UC IC=8A;IB1=0.8A;VCC=90V VBE = - 6V;RBB = 3.75Ω 2 0.4 0.8 ms 0.5 1.2 μs 0.12 0.25 μs Inchange Semiconductor Product Specification BUV27 Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3