SavantIC Semiconductor Product Specification BUV26 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 180 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 14 A ICM Collector current (peak) 25 A IB Base current 4 A IBM Base current (peak) 6 A Ptot Total power dissipation 85 W Tj Tstg TC=25 Max.operating junction temperature Storage temperature 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER MAX UNIT Thermal resistance junction to mounting base 1.92 K/W SavantIC Semiconductor Product Specification BUV26 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH VCEsat-1 Collector-emitter saturation voltage IC=6A ;IB=0.6 A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=12A; IB=1.2A 1.5 V VBEsat-1 Base-emitter saturation voltage IC=6A ;IB=0.6 A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=12A; IB=1.2A 2.0 V ICEX Collector cut-off current VCE =180V;VBE =-1.5V;Tj=125 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA 0.4 0.6 ms 0.45 1.0 µs 0.12 0.25 µs 90 UNIT V Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=12A;IB1=1.2A; IB2=2.4A VCC =50V 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 BUV26